JPWO2012066701A1 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 248
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 243
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000969 carrier Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 252
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 14
- 230000010287 polarization Effects 0.000 description 11
- 230000005533 two-dimensional electron gas Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
本発明の第1の実施形態について図1及び図2を参照しながら説明する。
以下、本発明の第2の実施形態について図8を参照しながら説明する。図8において、図1に示す構成部材と同一の構成部材には同一の符号を付すことにより説明を省略する。
以下、本発明の第3の実施形態について図10を参照しながら説明する。図10において、図1に示す構成部材と同一の構成部材には同一の符号を付すことにより説明を省略する。
2 バッファ層
3 第1の窒化物半導体層
4 第2の窒化物半導体層
5 第3の窒化物半導体層
6 第4の窒化物半導体層
7 2次元電子ガス
8 ソース電極
9 ゲート電極
10 ドレイン電極
11 絶縁膜
12 コントロール層
13 コンタクト層
14 ゲート絶縁膜
Claims (6)
- 基板の上に順次形成された、第1の窒化物半導体層、第2の窒化物半導体層、第3の窒化物半導体層及び第4の窒化物半導体層を備え、
前記第3の窒化物半導体層における前記第4の窒化物半導体層との界面の近傍にキャリアが蓄積されたチャネルが形成され、
前記第2の窒化物半導体層は、前記第3の窒化物半導体層よりもバンドギャップが大きく、
前記第1の窒化物半導体層は、そのバンドギャップが前記第2の窒化物半導体層のバンドギャップと同等かそれよりも大きく、且つ、前記第2の窒化物半導体層よりも高濃度の炭素が導入されている窒化物半導体装置。 - 請求項1において、
前記第1の窒化物半導体層及び前記第2の窒化物半導体層は、組成にアルミニウムを含む窒化物半導体装置。 - 請求項2において、
前記第4の窒化物半導体層は、前記第1の窒化物半導体層よりも高い組成比のアルミニウムを含む窒化物半導体装置。 - 請求項1において、
前記第4の窒化物半導体層の上に互いに間隔をおいて形成されたソース電極及びドレイン電極と、
前記第4の窒化物半導体層の上における前記ソース電極及びドレイン電極の間の領域に形成されたゲート電極とをさらに備えている窒化物半導体装置。 - 請求項4において、
前記第4の窒化物半導体層と前記ゲート電極との間に形成されたp型の第5の窒化物半導体層をさらに備えている窒化物半導体装置。 - 請求項4において、
前記第4の窒化物半導体層と前記ゲート電極との間に形成された絶縁膜をさらに備えている窒化物半導体装置。
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JP2012544078A JP5810293B2 (ja) | 2010-11-19 | 2011-07-19 | 窒化物半導体装置 |
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JP2010258913 | 2010-11-19 | ||
JP2010258913 | 2010-11-19 | ||
PCT/JP2011/004069 WO2012066701A1 (ja) | 2010-11-19 | 2011-07-19 | 窒化物半導体装置 |
JP2012544078A JP5810293B2 (ja) | 2010-11-19 | 2011-07-19 | 窒化物半導体装置 |
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US (1) | US20130240901A1 (ja) |
JP (1) | JP5810293B2 (ja) |
CN (1) | CN103155124A (ja) |
WO (1) | WO2012066701A1 (ja) |
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JP2014072426A (ja) | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
TWI506788B (zh) * | 2012-12-25 | 2015-11-01 | Huga Optotech Inc | 場效電晶體 |
JP6174874B2 (ja) * | 2013-03-15 | 2017-08-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5956371B2 (ja) * | 2013-03-22 | 2016-07-27 | 日本電信電話株式会社 | 光変調導波路 |
JP6287143B2 (ja) * | 2013-12-06 | 2018-03-07 | 株式会社デンソー | 半導体装置およびその製造方法 |
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JP2016004948A (ja) * | 2014-06-18 | 2016-01-12 | 株式会社東芝 | 半導体装置 |
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US8067787B2 (en) * | 2008-02-07 | 2011-11-29 | The Furukawa Electric Co., Ltd | Semiconductor electronic device |
EP2280426B1 (en) * | 2008-04-16 | 2017-07-05 | LG Innotek Co., Ltd. | Light-emitting device |
US8148732B2 (en) * | 2008-08-29 | 2012-04-03 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Carbon-containing semiconductor substrate |
JP5053220B2 (ja) * | 2008-09-30 | 2012-10-17 | 古河電気工業株式会社 | 半導体電子デバイスおよび半導体電子デバイスの製造方法 |
JP4677499B2 (ja) * | 2008-12-15 | 2011-04-27 | Dowaエレクトロニクス株式会社 | 電子デバイス用エピタキシャル基板およびその製造方法 |
JP2010165987A (ja) * | 2009-01-19 | 2010-07-29 | Panasonic Corp | 半導体装置及びその製造方法 |
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JP5580009B2 (ja) * | 2009-08-28 | 2014-08-27 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法 |
JP5188545B2 (ja) * | 2009-09-14 | 2013-04-24 | コバレントマテリアル株式会社 | 化合物半導体基板 |
-
2011
- 2011-07-19 CN CN2011800481716A patent/CN103155124A/zh active Pending
- 2011-07-19 WO PCT/JP2011/004069 patent/WO2012066701A1/ja active Application Filing
- 2011-07-19 JP JP2012544078A patent/JP5810293B2/ja active Active
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2013
- 2013-05-06 US US13/887,698 patent/US20130240901A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9831310B2 (en) * | 2012-07-10 | 2017-11-28 | Fujitsu Limited | Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier |
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WO2012066701A1 (ja) | 2012-05-24 |
CN103155124A (zh) | 2013-06-12 |
US20130240901A1 (en) | 2013-09-19 |
JP5810293B2 (ja) | 2015-11-11 |
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