JPWO2012053616A1 - 半導体基板のエッジ研磨用組成物及びそれを用いた半導体基板のエッジ研磨方法 - Google Patents
半導体基板のエッジ研磨用組成物及びそれを用いた半導体基板のエッジ研磨方法 Download PDFInfo
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- JPWO2012053616A1 JPWO2012053616A1 JP2012539768A JP2012539768A JPWO2012053616A1 JP WO2012053616 A1 JPWO2012053616 A1 JP WO2012053616A1 JP 2012539768 A JP2012539768 A JP 2012539768A JP 2012539768 A JP2012539768 A JP 2012539768A JP WO2012053616 A1 JPWO2012053616 A1 JP WO2012053616A1
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- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 239000002738 chelating agent Substances 0.000 claims abstract description 18
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- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 claims abstract description 10
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- 238000005530 etching Methods 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
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- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
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- 229910052708 sodium Inorganic materials 0.000 description 2
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- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
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- SFRLSTJPMFGBDP-UHFFFAOYSA-N 1,2-diphosphonoethylphosphonic acid Chemical compound OP(O)(=O)CC(P(O)(O)=O)P(O)(O)=O SFRLSTJPMFGBDP-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
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- MYWGVBFSIIZBHJ-UHFFFAOYSA-N 4-phosphonobutane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(C(O)=O)C(C(O)=O)CP(O)(O)=O MYWGVBFSIIZBHJ-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
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- 229920001218 Pullulan Polymers 0.000 description 1
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- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
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- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
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- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本実施形態のエッジ研磨用組成物は、アルコール類と、二酸化ケイ素と、イミダゾール又はイミダゾール誘導体と、アルカリ化合物と、水とを含有する。
本発明者らの検討によれば、炭素数が1〜6のアルコール類を含有するエッジ研磨用組成物を用いて半導体基板のエッジ研磨を行った場合、研磨時及び研磨後の半導体基板の表面及びエッジがアルコール類の働きによって親水性に保たれることにより、基板表面上に付着残留物が生じにくいこと、また、たとえ付着残留物が生じたとしても基板表面から容易に除去できることがわかった。
本実施形態のエッジ研磨用組成物中に含まれる二酸化ケイ素は、半導体基板のエッジを機械的に研磨する働きをする。
本実施形態のエッジ研磨用組成物中に含まれるイミダゾール又はイミダゾール誘導体は、イミダゾール環の1位の窒素原子の非共有電子対が半導体基板に作用し、半導体基板のエッジの研磨速度を上昇させる働きを有する。
本実施形態のエッジ研磨用組成物中に含まれるアルカリ化合物は、半導体基板のエッジをエッチングする作用を有し、半導体基板のエッジを化学的に研磨する。
本実施形態のエッジ研磨用組成物中に含まれる水は、エッジ研磨用組成物中の他の成分を溶解又は分散させる働きをする。水は、他の成分の作用を阻害する不純物をできるだけ含有しないことが好ましい。具体的には、イオン交換樹脂を使って不純物イオンを除去した後にフィルタを通して異物を除去したイオン交換水、あるいは純水、超純水又は蒸留水が好ましい。
本実施形態のエッジ研磨用組成物は、キレート剤をさらに含有してもよい。キレート剤を含有する場合、エッジ研磨用組成物による半導体基板の金属汚染を抑えることができる。使用可能なキレート剤の例としては、例えば、アミノカルボン酸系キレート剤及び有機ホスホン酸系キレート剤が挙げられる。アミノカルボン酸系キレート剤の具体例としては、ニトリロ三酢酸、エチレンジアミン四酢酸、ヒドロキシエチルエチレンジアミン三酢酸、ジエチレントリアミン五酢酸及びトリエチレンテトラミン六酢酸、並びにこれら酸のアンモニウム塩、カリウム塩、ナトリウム塩及びリチウム塩が挙げられる。有機ホスホン酸系キレート剤の具体例としては、2−アミノエチルホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、アミノトリ(メチレンホスホン酸)、エチレンジアミンテトラキス(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)、トリエチレンテトラミンヘキサ(メチレンホスホン酸)、エタン−1,1,−ジホスホン酸、エタン−1,1,2−トリホスホン酸、エタン−1−ヒドロキシ−1,1−ジホスホン酸、エタン−1−ヒドロキシ−1,1,2−トリホスホン酸、エタン−1,2−ジカルボキシ−1,2−ジホスホン酸、メタンヒドロキシホスホン酸、2−ホスホノブタン−1,2−ジカルボン酸、1−ホスホノブタン−2,3,4−トリカルボン酸及びα−メチルホスホノコハク酸、並びにこれら酸のアンモニウム塩、カリウム塩、ナトリウム塩及びリチウム塩が挙げられる。中でも好ましいキレート剤は、アミノカルボン酸系キレート剤では、ジエチレントリアミン五酢酸及びトリエチレンテトラミン六酢酸、並びにそれら酸のアンモニウム塩、カリウム塩、ナトリウム塩及びリチウム塩であり、有機ホスホン酸系キレート剤では、エチレンジアミンテトラキス(メチレンホスホン酸)、ジエチレントリアミンペンタ(メチレンホスホン酸)及びトリエチレンテトラミンヘキサ(メチレンホスホン酸)、並びにそれら酸のアンモニウム塩、カリウム塩、ナトリウム塩及びリチウム塩である。最も好ましく使用されるキレート剤はエチレンジアミンテトラキス(メチレンホスホン酸)である。
本実施形態のエッジ研磨用組成物は、半導体基板のエッジの研磨で通常に用いられるのと同じ装置及び条件で使用することができる。一般的には、半導体基板を保持具によって保持し、基板表面に対して垂直又は斜めに配置した研磨パッドを基板のエッジに押し付けた状態で、エッジ研磨用組成物を研磨パッドに供給しながら、半導体基板及び研磨パッドをエッジの円周方向に回転させる。このとき、研磨パッド及びエッジ研磨用組成物中の二酸化ケイ素が半導体基板のエッジに摩擦することによる物理的作用と、エッジ研磨用組成物中のイミダゾール又はイミダゾール誘導体とアルカリ化合物の組み合わせが半導体基板のエッジに与える化学的作用によって半導体基板のエッジは研磨される。
Claims (4)
- 炭素数が1〜6のアルコール類と、
二酸化ケイ素と、
イミダゾール及びイミダゾール誘導体から選ばれる少なくとも1種と、
アルカリ化合物と、
水とを含有する半導体基板のエッジ研磨用組成物。 - 前記アルコール類が脂肪族飽和アルコールであることを特徴とする請求項1に記載のエッジ研磨用組成物。
- さらにキレート剤を含有することを特徴とする請求項1又は2に記載のエッジ研磨用組成物。
- 請求項1〜3のいずれか一項に記載のエッジ研磨用組成物を用いた半導体基板のエッジ研磨方法。
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JP2009218288A (ja) * | 2008-03-07 | 2009-09-24 | Fujifilm Corp | 研磨液及びそれを用いた化学的機械的研磨方法 |
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