JPWO2011013657A1 - 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 - Google Patents
化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 Download PDFInfo
- Publication number
- JPWO2011013657A1 JPWO2011013657A1 JP2010546972A JP2010546972A JPWO2011013657A1 JP WO2011013657 A1 JPWO2011013657 A1 JP WO2011013657A1 JP 2010546972 A JP2010546972 A JP 2010546972A JP 2010546972 A JP2010546972 A JP 2010546972A JP WO2011013657 A1 JPWO2011013657 A1 JP WO2011013657A1
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal
- semiconductor
- solution
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 150000001875 compounds Chemical class 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 title description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 124
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 63
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 48
- 239000012046 mixed solvent Substances 0.000 claims abstract description 48
- 150000001787 chalcogens Chemical class 0.000 claims abstract description 47
- 239000002994 raw material Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 51
- 238000000576 coating method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 24
- 239000002244 precipitate Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 description 40
- 239000000126 substance Substances 0.000 description 21
- 239000011669 selenium Substances 0.000 description 17
- 229910052738 indium Inorganic materials 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 229910052711 selenium Inorganic materials 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- -1 composed of Cu Chemical class 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000012488 sample solution Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- YWBHROUQJYHSOR-UHFFFAOYSA-N $l^{1}-selanylbenzene Chemical compound [Se]C1=CC=CC=C1 YWBHROUQJYHSOR-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- GSOHKPVFCOWKPU-UHFFFAOYSA-N 3-methylpentane-2,4-dione Chemical compound CC(=O)C(C)C(C)=O GSOHKPVFCOWKPU-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- SKOLWUPSYHWYAM-UHFFFAOYSA-N carbonodithioic O,S-acid Chemical compound SC(S)=O SKOLWUPSYHWYAM-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- YWWZCHLUQSHMCL-UHFFFAOYSA-N diphenyl diselenide Chemical compound C=1C=CC=CC=1[Se][Se]C1=CC=CC=C1 YWWZCHLUQSHMCL-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- JPIIVHIVGGOMMV-UHFFFAOYSA-N ditellurium Chemical compound [Te]=[Te] JPIIVHIVGGOMMV-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-O hydrazinium(1+) Chemical compound [NH3+]N OAKJQQAXSVQMHS-UHFFFAOYSA-O 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- ORQWTLCYLDRDHK-UHFFFAOYSA-N phenylselanylbenzene Chemical compound C=1C=CC=CC=1[Se]C1=CC=CC=C1 ORQWTLCYLDRDHK-UHFFFAOYSA-N 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 150000003958 selenols Chemical class 0.000 description 1
- 150000003962 selenoxides Chemical class 0.000 description 1
- GYSDUVRPSWKYDJ-UHFFFAOYSA-N selinone Chemical compound C1=CC(OCC=C(C)C)=CC=C1C1OC2=CC(O)=CC(O)=C2C(=O)C1 GYSDUVRPSWKYDJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- TULWUZJYDBGXMY-UHFFFAOYSA-N tellurophene Chemical compound [Te]1C=CC=C1 TULWUZJYDBGXMY-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
2:第1の電極層
3:光吸収層
4:バッファ層
5:第2の電極層
6:第3の電極層
7:接続導体
8:集電電極
10:光電変換装置
Claims (11)
- カルコゲン元素含有有機化合物およびルイス塩基性有機化合物を含む混合溶媒に、I−B族元素およびIII−B族元素の少なくとも一方を含む金属原料を金属の状態で溶解させて半導体形成用溶液を作製する工程と、
該半導体形成用溶液を用いて皮膜を作製する工程と、
該皮膜を熱処理する工程と
を具備することを特徴とする化合物半導体の製造方法。 - 前記混合溶媒中で、前記カルコゲン元素含有有機化合物を、前記ルイス塩基性有機化合物および前記金属原料と化学結合させる、請求項1に記載の化合物半導体の製造方法。
- 前記金属原料はI−B族元素およびIII−B族元素を含んでおり、前記半導体形成用溶液を作製する工程は、前記混合溶媒に前記I−B族元素の金属および前記III−B族元素の金属を溶解させる工程を含む、請求項1に記載の化合物半導体の製造方法。
- 前記金属原料はI−B族元素およびIII−B族元素を含んでおり、前記半導体形成用溶液を作製する工程は、前記混合溶媒に前記I−B族元素と前記III−B族元素との合金を溶解させる工程を含む、請求項1に記載の化合物半導体の製造方法。
- 前記金属原料はI−B族元素およびIII−B族元素を含んでおり、
前記半導体形成用溶液を作製する工程は、
前記混合溶媒に前記I−B族元素の金属を溶解させてI−B族金属溶液を作製する工程と、
前記混合溶媒に前記III−B族元素の金属を溶解させてIII−B族金属溶液を作製する工程と、
前記I−B族金属溶液および前記III−B族金属溶液を混合する工程と
を含む、請求項1に記載の化合物半導体の製造方法。 - 前記半導体形成用溶液を作製する工程は、前記混合溶媒にさらにVI−B族元素を単体の状態で溶解させる工程を含む、請求項1記載の化合物半導体の製造方法。
- 前記皮膜を作製する工程は、前記半導体形成用溶液を塗布して皮膜を形成する工程を含む、請求項1記載の化合物半導体の製造方法。
- 前記皮膜を作製する工程は、
前記半導体形成用溶液に前記ルイス塩基性有機化合物よりも極性の低い低極性溶媒を加えて沈殿物を生じさせる工程と、
該沈殿物を有機溶媒に溶解させて塗布液を作製する工程と、
該塗布液を塗布して皮膜を形成する工程と
を含む、請求項1記載の化合物半導体の製造方法。 - カルコゲン元素含有有機化合物およびルイス塩基性有機化合物を含む混合溶媒に、I−B族元素およびIII−B族元素の少なくとも一方を含む金属原料を金属の状態で溶解させて半導体形成用溶液を作製する工程と、
該半導体形成用溶液を電極上に塗布して皮膜を作製する工程と、
該皮膜を熱処理して化合物半導体にする工程と、
該化合物半導体上に該化合物半導体とは異なる導電型の第2の半導体を作製する工程と
を具備することを特徴とする光電変換装置の製造方法。 - カルコゲン元素含有有機化合物およびルイス塩基性有機化合物を含む混合溶媒と、該混合溶媒に金属の状態で溶解された、I−B族元素およびIII−B族元素の少なくとも一方を含む金属原料とを有する半導体形成用溶液。
- 前記混合溶媒中で、前記カルコゲン元素含有有機化合物は、前記ルイス塩基性有機化合物および前記金属原料と化学結合している、請求項10に記載の半導体形成用溶液。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010546972A JP5340314B2 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009177632 | 2009-07-30 | ||
JP2009177632 | 2009-07-30 | ||
JP2009198390 | 2009-08-28 | ||
JP2009198391 | 2009-08-28 | ||
JP2009198390 | 2009-08-28 | ||
JP2009198391 | 2009-08-28 | ||
JP2009198428 | 2009-08-28 | ||
JP2009198428 | 2009-08-28 | ||
JP2009240313 | 2009-10-19 | ||
JP2009240313 | 2009-10-19 | ||
PCT/JP2010/062604 WO2011013657A1 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
JP2010546972A JP5340314B2 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011013657A1 true JPWO2011013657A1 (ja) | 2013-01-07 |
JP5340314B2 JP5340314B2 (ja) | 2013-11-13 |
Family
ID=43529311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010546972A Expired - Fee Related JP5340314B2 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9023680B2 (ja) |
EP (1) | EP2461355A4 (ja) |
JP (1) | JP5340314B2 (ja) |
CN (1) | CN102362339B (ja) |
WO (1) | WO2011013657A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5683377B2 (ja) * | 2010-12-24 | 2015-03-11 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
JP5566335B2 (ja) * | 2010-12-27 | 2014-08-06 | 京セラ株式会社 | 光電変換装置の製造方法 |
WO2012114879A1 (ja) * | 2011-02-25 | 2012-08-30 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
JP2012227377A (ja) * | 2011-04-20 | 2012-11-15 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
FR2974745B1 (fr) * | 2011-05-06 | 2013-04-26 | Commissariat Energie Atomique | Dispositif et procede de depot par enduction a la racle d'encre a base de cuivre et d'indium |
JP5687343B2 (ja) * | 2011-06-27 | 2015-03-18 | 京セラ株式会社 | 半導体層の製造方法、光電変換装置の製造方法および半導体原料 |
JP2013021231A (ja) * | 2011-07-13 | 2013-01-31 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
JP5922348B2 (ja) * | 2011-07-25 | 2016-05-24 | 京セラ株式会社 | 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用液 |
JP6012866B2 (ja) * | 2013-06-03 | 2016-10-25 | 東京応化工業株式会社 | 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法 |
DE102020108334A1 (de) | 2020-03-26 | 2021-09-30 | Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung | Stapelsolarzellenmodul und Verfahren zur Herstellung des Stapelsolarzellenmoduls |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8715082D0 (en) * | 1987-06-26 | 1987-08-05 | Prutec Ltd | Solar cells |
US6126740A (en) * | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
EP0837511B1 (en) | 1996-10-15 | 2005-09-14 | Matsushita Electric Industrial Co., Ltd | Solar cell and method for manufacturing the same |
JP3589380B2 (ja) * | 1997-06-05 | 2004-11-17 | 松下電器産業株式会社 | 半導体薄膜の製造方法および薄膜太陽電池の製造方法 |
JP2001053314A (ja) * | 1999-08-17 | 2001-02-23 | Central Glass Co Ltd | 化合物半導体膜の製造方法 |
US6992202B1 (en) * | 2002-10-31 | 2006-01-31 | Ohio Aerospace Institute | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
CN100490205C (zh) | 2003-07-10 | 2009-05-20 | 国际商业机器公司 | 淀积金属硫族化物膜的方法和制备场效应晶体管的方法 |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8679587B2 (en) * | 2005-11-29 | 2014-03-25 | State of Oregon acting by and through the State Board of Higher Education action on Behalf of Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
US8784701B2 (en) * | 2007-11-30 | 2014-07-22 | Nanoco Technologies Ltd. | Preparation of nanoparticle material |
JP5311977B2 (ja) * | 2008-11-14 | 2013-10-09 | 京セラ株式会社 | 薄膜太陽電池の製法 |
US8709860B2 (en) * | 2010-04-14 | 2014-04-29 | Kyocera Corporation | Method for manufacturing photoelectric conversion device |
-
2010
- 2010-07-27 CN CN201080012699.3A patent/CN102362339B/zh not_active Expired - Fee Related
- 2010-07-27 EP EP10804403.3A patent/EP2461355A4/en not_active Withdrawn
- 2010-07-27 JP JP2010546972A patent/JP5340314B2/ja not_active Expired - Fee Related
- 2010-07-27 WO PCT/JP2010/062604 patent/WO2011013657A1/ja active Application Filing
- 2010-07-27 US US13/320,895 patent/US9023680B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120070937A1 (en) | 2012-03-22 |
US9023680B2 (en) | 2015-05-05 |
EP2461355A1 (en) | 2012-06-06 |
CN102362339B (zh) | 2014-03-26 |
EP2461355A4 (en) | 2016-05-04 |
WO2011013657A1 (ja) | 2011-02-03 |
CN102362339A (zh) | 2012-02-22 |
JP5340314B2 (ja) | 2013-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5052697B2 (ja) | 光電変換装置 | |
JP5340314B2 (ja) | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 | |
JP5495849B2 (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP5495925B2 (ja) | 半導体の製造方法および光電変換装置の製造方法 | |
WO2011129322A1 (ja) | 光電変換装置、および光電変換装置の製造方法 | |
JP5409960B2 (ja) | 光電変換装置 | |
JP5174248B2 (ja) | カルコゲン化合物半導体層の製造方法および光電変換装置の製造方法 | |
JP2013245212A (ja) | 半導体原料、半導体層の製造方法および光電変換装置の製造方法 | |
JP5570650B2 (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP5464984B2 (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP2013201179A (ja) | 半導体層形成用溶液、半導体層の製造方法および光電変換装置の製造方法 | |
JP5918042B2 (ja) | 光電変換装置の製造方法 | |
JP2011249560A (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP2011091229A (ja) | 光電変換体の製造方法および光電変換装置の製造方法 | |
JP6162592B2 (ja) | 光電変換装置の製造方法 | |
JP2015153950A (ja) | 光電変換装置の製造方法 | |
JP2011086859A (ja) | 光電変換装置 | |
JP2011138837A (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP2013012722A (ja) | 光電変換装置の製造方法 | |
JP2012109559A (ja) | 光電変換装置 | |
JP2012064734A (ja) | 光電変換装置の製造方法 | |
US20140224333A1 (en) | Photoelectric conversion device | |
JP2012138477A (ja) | 半導体層の製造方法および光電変換装置の製造方法 | |
JP2011151182A (ja) | 光電変換装置、および光電変換装置の製造方法 | |
JP2012227377A (ja) | 半導体層の製造方法および光電変換装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130416 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130613 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130709 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5340314 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |