JP5340314B2 - 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 - Google Patents
化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 115
- 150000001875 compounds Chemical class 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000006243 chemical reaction Methods 0.000 title description 54
- 229910052751 metal Inorganic materials 0.000 claims description 120
- 239000002184 metal Substances 0.000 claims description 118
- 150000002894 organic compounds Chemical class 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 49
- 239000012046 mixed solvent Substances 0.000 claims description 47
- 229910052798 chalcogen Inorganic materials 0.000 claims description 45
- 150000001787 chalcogens Chemical class 0.000 claims description 44
- 239000002994 raw material Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000002244 precipitate Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 150000003958 selenols Chemical class 0.000 claims description 7
- 150000003573 thiols Chemical class 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 description 40
- 239000000126 substance Substances 0.000 description 21
- 239000011669 selenium Substances 0.000 description 17
- 229910052738 indium Inorganic materials 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 229910052711 selenium Inorganic materials 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- -1 composed of Cu Chemical class 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000012488 sample solution Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 230000003647 oxidation Effects 0.000 description 2
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- 230000000737 periodic effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- WDODWFPDZYSKIA-UHFFFAOYSA-N benzeneselenol Chemical compound [SeH]C1=CC=CC=C1 WDODWFPDZYSKIA-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-O hydrazinium(1+) Chemical compound [NH3+]N OAKJQQAXSVQMHS-UHFFFAOYSA-O 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
導体形成用溶液を作製する工程である。第2の工程は、前記半導体形成用溶液を用いて皮膜を作製する工程である。第3の工程は、前記皮膜を熱処理する工程である。
方を含む金属原料を金属の状態で溶解させて半導体形成用溶液を作製する工程である。第2の工程は、前記半導体形成用溶液を電極上に塗布して皮膜を作製する工程である。第3の工程は、前記皮膜を熱処理して化合物半導体を作製する工程である。第4の工程は、該
化合物半導体上に該化合物半導体とは異なる導電型を有する第2の半導体を作製する工程である。
含む金属原料を金属の状態で溶解させて成る。
ある。ルイス塩基性有機化合物の具体例としては、ピリジン、アニリン、トリエチルアミン、トリエタノールアミン等およびこれらの誘導体が挙げられる。取り扱い性の観点からは一般に有機溶剤として用いられている室温で液状であるものを用いることができる。特に塗布性を高めるという観点からは、沸点が100℃以上であるものを用いることができる。
2:第1の電極層
3:光吸収層
4:バッファ層
5:第2の電極層
6:第3の電極層
7:接続導体
8:集電電極
10:光電変換装置
Claims (11)
- チオールまたはセレノールから成るカルコゲン元素含有有機化合物および非共有電子対を有する窒素元素を具備するルイス塩基性有機化合物を含む混合溶媒に、I−B族元素およびIII−B族元素の少なくとも一方を含む金属原料を金属の状態で溶解させて半導体形
成用溶液を作製する工程と、
該半導体形成用溶液を用いて皮膜を作製する工程と、
該皮膜を熱処理する工程と
を具備することを特徴とする化合物半導体の製造方法。 - 前記混合溶媒中で、前記カルコゲン元素含有有機化合物を、前記ルイス塩基性有機化合物および前記金属原料と化学結合させる、請求項1に記載の化合物半導体の製造方法。
- 前記金属原料はI−B族元素およびIII−B族元素を含んでおり、前記半導体形成用溶
液を作製する工程は、前記混合溶媒に前記I−B族元素の金属および前記III−B族元素
の金属を溶解させる工程を含む、請求項1に記載の化合物半導体の製造方法。 - 前記金属原料はI−B族元素およびIII−B族元素を含んでおり、前記半導体形成用溶
液を作製する工程は、前記混合溶媒に前記I−B族元素と前記III−B族元素との合金を
溶解させる工程を含む、請求項1に記載の化合物半導体の製造方法。 - 前記金属原料はI−B族元素およびIII−B族元素を含んでおり、
前記半導体形成用溶液を作製する工程は、
前記混合溶媒に前記I−B族元素の金属を溶解させてI−B族金属溶液を作製する工程と、
前記混合溶媒に前記III−B族元素の金属を溶解させてIII−B族金属溶液を作製する工程と、
前記I−B族金属溶液および前記III−B族金属溶液を混合する工程と
を含む、請求項1に記載の化合物半導体の製造方法。 - 前記半導体形成用溶液を作製する工程は、前記混合溶媒にさらにVI−B族元素を単体の状態で溶解させる工程を含む、請求項1記載の化合物半導体の製造方法。
- 前記皮膜を作製する工程は、前記半導体形成用溶液を塗布して皮膜を形成する工程を含む、請求項1記載の化合物半導体の製造方法。
- 前記皮膜を作製する工程は、
前記半導体形成用溶液に前記ルイス塩基性有機化合物よりも極性の低い低極性溶媒を加えて沈殿物を生じさせる工程と、
該沈殿物を有機溶媒に溶解させて塗布液を作製する工程と、
該塗布液を塗布して皮膜を形成する工程と
を含む、請求項1記載の化合物半導体の製造方法。 - チオールまたはセレノールから成るカルコゲン元素含有有機化合物および非共有電子対を有する窒素元素を具備するルイス塩基性有機化合物を含む混合溶媒に、I−B族元素およびIII−B族元素の少なくとも一方を含む金属原料を金属の状態で溶解させて半導体形
成用溶液を作製する工程と、
該半導体形成用溶液を電極上に塗布して皮膜を作製する工程と、
該皮膜を熱処理して化合物半導体にする工程と、
該化合物半導体上に該化合物半導体とは異なる導電型の第2の半導体を作製する工程と
を具備することを特徴とする光電変換装置の製造方法。 - チオールまたはセレノールから成るカルコゲン元素含有有機化合物および非共有電子対を有する窒素元素を具備するルイス塩基性有機化合物を含む混合溶媒と、該混合溶媒に金属の状態で溶解された、I−B族元素およびIII−B族元素の少なくとも一方を含む金属
原料とを有する半導体形成用溶液。 - 前記混合溶媒中で、前記カルコゲン元素含有有機化合物は、前記ルイス塩基性有機化合物および前記金属原料と化学結合している、請求項10に記載の半導体形成用溶液。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010546972A JP5340314B2 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
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Application Number | Priority Date | Filing Date | Title |
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JP2009177632 | 2009-07-30 | ||
JP2009177632 | 2009-07-30 | ||
JP2009198391 | 2009-08-28 | ||
JP2009198428 | 2009-08-28 | ||
JP2009198428 | 2009-08-28 | ||
JP2009198390 | 2009-08-28 | ||
JP2009198391 | 2009-08-28 | ||
JP2009198390 | 2009-08-28 | ||
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PCT/JP2010/062604 WO2011013657A1 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
JP2010546972A JP5340314B2 (ja) | 2009-07-30 | 2010-07-27 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
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JP5683377B2 (ja) * | 2010-12-24 | 2015-03-11 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
JP5566335B2 (ja) * | 2010-12-27 | 2014-08-06 | 京セラ株式会社 | 光電変換装置の製造方法 |
JP5570650B2 (ja) * | 2011-02-25 | 2014-08-13 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
JP2012227377A (ja) * | 2011-04-20 | 2012-11-15 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
FR2974745B1 (fr) * | 2011-05-06 | 2013-04-26 | Commissariat Energie Atomique | Dispositif et procede de depot par enduction a la racle d'encre a base de cuivre et d'indium |
US9287434B2 (en) | 2011-06-27 | 2016-03-15 | Kyocera Corporation | Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material |
JP2013021231A (ja) * | 2011-07-13 | 2013-01-31 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
JP5922348B2 (ja) * | 2011-07-25 | 2016-05-24 | 京セラ株式会社 | 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用液 |
CN105308760B (zh) * | 2013-06-03 | 2019-06-18 | 东京应化工业株式会社 | 络合物溶液、光吸收层及太阳能电池的制造方法 |
DE102020108334A1 (de) | 2020-03-26 | 2021-09-30 | Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung | Stapelsolarzellenmodul und Verfahren zur Herstellung des Stapelsolarzellenmoduls |
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JPH10341029A (ja) * | 1997-06-05 | 1998-12-22 | Matsushita Electric Ind Co Ltd | 半導体薄膜の製造方法および薄膜太陽電池の製造方法 |
JP2001053314A (ja) * | 1999-08-17 | 2001-02-23 | Central Glass Co Ltd | 化合物半導体膜の製造方法 |
US6992202B1 (en) * | 2002-10-31 | 2006-01-31 | Ohio Aerospace Institute | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
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US6126740A (en) * | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
EP0837511B1 (en) | 1996-10-15 | 2005-09-14 | Matsushita Electric Industrial Co., Ltd | Solar cell and method for manufacturing the same |
CN100490205C (zh) | 2003-07-10 | 2009-05-20 | 国际商业机器公司 | 淀积金属硫族化物膜的方法和制备场效应晶体管的方法 |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8679587B2 (en) * | 2005-11-29 | 2014-03-25 | State of Oregon acting by and through the State Board of Higher Education action on Behalf of Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
US8784701B2 (en) * | 2007-11-30 | 2014-07-22 | Nanoco Technologies Ltd. | Preparation of nanoparticle material |
JP5311977B2 (ja) * | 2008-11-14 | 2013-10-09 | 京セラ株式会社 | 薄膜太陽電池の製法 |
US8709860B2 (en) * | 2010-04-14 | 2014-04-29 | Kyocera Corporation | Method for manufacturing photoelectric conversion device |
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JPH10341029A (ja) * | 1997-06-05 | 1998-12-22 | Matsushita Electric Ind Co Ltd | 半導体薄膜の製造方法および薄膜太陽電池の製造方法 |
JP2001053314A (ja) * | 1999-08-17 | 2001-02-23 | Central Glass Co Ltd | 化合物半導体膜の製造方法 |
US6992202B1 (en) * | 2002-10-31 | 2006-01-31 | Ohio Aerospace Institute | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
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US9023680B2 (en) | 2015-05-05 |
EP2461355A1 (en) | 2012-06-06 |
CN102362339B (zh) | 2014-03-26 |
EP2461355A4 (en) | 2016-05-04 |
JPWO2011013657A1 (ja) | 2013-01-07 |
CN102362339A (zh) | 2012-02-22 |
WO2011013657A1 (ja) | 2011-02-03 |
US20120070937A1 (en) | 2012-03-22 |
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