JPWO2009154002A1 - 真空処理装置、真空処理方法及び電子デバイスの製造方法 - Google Patents
真空処理装置、真空処理方法及び電子デバイスの製造方法 Download PDFInfo
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Abstract
Description
(1)搬送チャンバに設けた搬送ロボットの搬送アーム先端に処理前基板を載置し、搬送チャンバから基板処理チャンバ内に基板を搬送し、そのまま基板を静電吸着ホルダの鉛直下まで水平移動させる工程。
(2)工程(1)の後、静電吸着ホルダと基板とが接触する位置まで搬送アームもしくは静電吸着ホルダを鉛直下方方向に移動させる工程。
(3)静電吸着用の電力の供給により静電吸着ホルダに基板を吸着させる工程。
前記真空容器内に設けられ、鉛直下方に向く基板吸着面を有し、基板を静電吸着する静電吸着機構を備えた基板ホルダと、
前記真空容器内に設けられ、前記基板と前記基板吸着面とを平行に保ち、前記基板を前記基板吸着面に吸着可能な姿勢で支持する基板支持部材と、
前記基板支持部材に支持される前記基板及び前記基板ホルダのうち少なくとも一方を移動させ、前記基板と前記基板ホルダとを接触させることで前記基板を前記基板ホルダに吸着させる移動機構と、
を備えることを特徴とする。
図1は、本発明の真空処理装置1における第1の実施形態の構成を示す概略図である。図1に示すように、本実施の形態の真空処理装置1は、真空排気系(不図示)に接続されて真空排気可能な複数のチャンバ(真空容器)が、真空排気可能な搬送チャンバ22にゲートバルブ23を介して接続されて構成される。ここで搬送チャンバ22に接続されるチャンバとは、例えば、基板15を真空処理装置1へ導入するロードロックチャンバ24、基板15を真空処理する基板処理チャンバ21、処理後の基板15を回収するアンロードロックチャンバ25がある。図1の真空処理装置1は、基板処理チャンバ21が4基、ロードロックチャンバ24が1基、アンロードロックチャンバ25が1基それぞれ備わっているが、本発明の実施形態はこれに限定されるものではない。
スパッタ処理を行う際に、基板処理温度を高温にする必要がある場合、基板ホルダ3は温度調整機構を備えてもよい。温度調整機構とは、図2に示される基板吸着面5aの温度を調整するものである。温度調整機構は、例えば、基板ホルダ3に内蔵されたヒータや基板ホルダ3に液体の伝熱媒体を循環させる機構である。尚、ヒータと伝熱媒体循環機構とは、基板ホルダ3の温度制御性を上げるために併用して使用しても構わない。
次に、図7の概略構成図を用いて、第3の実施形態について説明する。尚、第3の実施形態では、第1の実施形態と装置構成が共通する部分は図中同一符号で示し、説明を省略する。
第3の実施形態の真空処理装置に、さらに、基板の吸着不良を検出する落下防止センサを設け、基板保持力が基板荷重より低下していることを検出するようにしてもよい。図9の参照により、落下防止センサが設けられた第4の実施形態にかかる真空処理装置の落下防止動作を説明する。図9に示すように、停電のときは(図9のA)第3の実施形態の付勢部材30により、基板支持部材10aを落下防止位置(移載位置)に配置させるために、真空処理装置のコントローラは以下の処理を実行する。まず、停電が発生すると、作動流体の出力を自動的に停止させる(S901)。そして、付勢部材30により基板支持部材10aを駆動し、基板ホルダ3の下方へ基板支持部材10aを移動させる(S902)。基板ホルダ3が自重により下降し、基板支持部材10aが基板15を受け止める(S903)。
課題を解決するための手段
[0009]
本発明は上述の問題点に鑑みてなされたものであり、フェイスダウン型の真空処理装置において、パーティクルの発生を抑え、かつ、確実に基板を保持して処理可能な真空処理装置及びその方法を提供することを目的とする。
[0010]
本発明では、搬送ロボットとは別に、基板を基板吸着面に対して平行に支持する基板支持部材を真空容器内に設けることで、確実に平行姿勢を維持できるようにした。
[0011]
本発明の実施形態に係る真空処理装置は、真空排気可能な真空容器と、
前記真空容器内に設けられ、鉛直下方に向く基板吸着面を有し、基板を静電吸着する静電吸着機構を備える基板ホルダと、
前記真空容器内に設けられ、前記基板と前記基板吸着面に吸着可能な姿勢で前記基板を支持する基板支持部材と、
前記基板支持部材に支持される前記基板及び前記基板ホルダのうち少なくとも一方を移動させ、前記基板と前記基板ホルダとを接触させることで前記基板を前記基板ホルダに吸着させる移動手段と、
前記真空容器内に設けられ、前記基板の処理空間と前記真空容器の内壁側の空間とを隔てるものであって、前記処理空間と前記内壁側の空間とを連通する開口が形成されたシールドと、
前記真空容器外に設けられ、前記移動手段により前記基板を吸着させた後、前記基板を吸着させた位置から前記シールドの前記開口を通って前記内壁側の空間へ、前記基板支持部材を退避させるための基板支持部材駆動手段と、
を備えることを特徴とする。
発明の効果
[0012]
本発明によれば、ターゲット上に落下する異物(パーティクル)の発生を抑え、処理中に確実に基板を保持することができる。
図面の簡単な説明
[0013]
添付図面は明細書に含まれ、その一部を構成し、本発明の実施の形態を示し、その記述を共に本発明の原理を説明するために用いられる。
[図1]第1の実施形態の真空処理装置の構成を例示する図である。
[図2]第1の実施形態の真空処理装置が備えている基板処理チャンバ21を中心とした構成例を示す図である。
[図3A]基板支持部材10aの形状を例示する平面概略図である。
[図3B]基板支持部材10aの形状を例示する平面概略図である。
[図3C]基板支持部材10aの形状を例示する平面概略図である。
Claims (9)
- 真空処理装置において、
真空排気可能な真空容器と、
前記真空容器内に設けられ、鉛直下方に向く基板吸着面を有し、基板を静電吸着する静電吸着機構を備える基板ホルダと、
前記真空容器内に設けられ、前記基板と前記基板吸着面に吸着可能な姿勢で前記基板を支持する基板支持部材と、
前記基板支持部材に支持される前記基板及び前記基板ホルダのうち少なくとも一方を移動させ、前記基板と前記基板ホルダとを接触させることで前記基板を前記基板ホルダに吸着させる移動手段と、
を備えることを特徴とする真空処理装置。 - 前記基板を吸着させた後、前記基板を吸着させた位置から前記基板支持部材を退避させるための基板支持部材駆動手段をさらに備えることを特徴とする請求項1に記載の真空処理装置。
- 前記基板ホルダと、前記基板支持部材の退避位置と、を隔てるシールドをさらに備えることを特徴とする請求項1または2に記載の真空処理装置。
- 前記基板支持部材は、前記基板ホルダに対して前記基板を平行に支持するものであることを特徴とする請求項1乃至3のいずれか1項に記載の真空処理装置。
- 前記基板ホルダに内蔵される温度調整機構と、
コントローラと、を更に備え、
前記温度調整機構が前記基板吸着面の温度を調整し、
前記コントローラが、前記静電吸着機構と、前記温度調整機構と、前記移動手段とを制御し、前記温度調整機構を作動させた状態で、前記基板支持機構に支持される前記基板と前記基板ホルダとを接近させ、前記基板と前記基板ホルダとが接近している状態で所定時間経過するまで前記静電吸着機構の動作を待機させ、前記所定時間経過後、前記基板吸着面に前記基板を接触させた状態で前記静電吸着機構を作動させることを特徴とする請求項1乃至4のいずれか1項に記載の真空処理装置。 - 静電吸着のプロセス中に前記基板を保持する基板保持力が低下した場合に、前記基板支持部材を前記基板ホルダの下方位置へと配置させる構成としたことを特徴とする請求項1乃至5のいずれか1項に記載の真空処理装置。
- 前記基板支持部材が退避位置にある場合に、前記基板ホルダの下方位置の方向に付勢し続ける付勢部材を備え、前記プロセス中に前記基板保持力が低下した場合に、前記付勢部材の付勢力により前記基板支持部材を前記基板ホルダの下方位置へ移動させることを特徴とする請求項6に記載の真空処理装置。
- 真空排気可能な真空容器内に設けられ、基板吸着面を有し、基板を静電吸着する静電吸着機構を備える基板ホルダを用い、前記基板ホルダに前記基板を静電吸着させた状態で真空処理を行う真空処理方法において、
基板搬送機構によって前記真空容器内に前記基板を搬送する工程と、
前記基板吸着面に吸着可能な姿勢で前記基板を支持する基板支持部材に基板を受け渡す工程と、
前記基板支持部材によって支持された状態で前記基板と前記基板吸着面とを接触させる工程と、
前記基板と前記基板吸着面とが接触している状態で前記静電吸着機構を作動させて前記基板を静電吸着させる工程と、
を有することを特徴とする真空処理方法。 - 基板を静電吸着する静電吸着機構を備え鉛直下方に向く基板吸着面を有する基板ホルダが真空排気可能な真空容器内に設けられ、前記基板ホルダに前記基板を静電吸着させた状態で真空処理を行う真空処理装置を用いた電子デバイスの製造方法において、
搬送機構によって前記真空容器内に基板を搬送する工程と、
前記基板吸着面に吸着可能な姿勢で前記基板を支持する基板支持部材に基板を受け渡す工程と、
前記基板支持部材によって支持した状態で前記基板と前記基板吸着面とを接触させる工程と、
前記基板と前記基板吸着面とが接触している状態で前記静電吸着機構を作動させて前記基板を静電吸着させる工程と、
静電吸着された前記基板に対して真空処理を行う工程と、
を有することを特徴とする電子デバイスの製造方法。
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WO2014002465A1 (ja) * | 2012-06-26 | 2014-01-03 | キヤノンアネルバ株式会社 | エピタキシャル膜形成方法、スパッタリング装置、半導体発光素子の製造方法、半導体発光素子、および照明装置 |
US9929121B2 (en) * | 2015-08-31 | 2018-03-27 | Kulicke And Soffa Industries, Inc. | Bonding machines for bonding semiconductor elements, methods of operating bonding machines, and techniques for improving UPH on such bonding machines |
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- 2009-06-19 CN CN200980119910.9A patent/CN102047406B/zh active Active
- 2009-06-19 JP JP2010517738A patent/JP4603099B2/ja active Active
- 2009-06-19 EP EP09766450A patent/EP2290678A1/en not_active Withdrawn
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2010
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2012
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Publication number | Publication date |
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WO2009154002A1 (ja) | 2009-12-23 |
US20110064880A1 (en) | 2011-03-17 |
CN102047406A (zh) | 2011-05-04 |
US20130032468A1 (en) | 2013-02-07 |
EP2290678A1 (en) | 2011-03-02 |
US8709218B2 (en) | 2014-04-29 |
CN102047406B (zh) | 2013-06-05 |
JP4603099B2 (ja) | 2010-12-22 |
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