JPWO2007108290A1 - バンプ形成方法およびバンプ形成装置 - Google Patents
バンプ形成方法およびバンプ形成装置 Download PDFInfo
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- JPWO2007108290A1 JPWO2007108290A1 JP2008506209A JP2008506209A JPWO2007108290A1 JP WO2007108290 A1 JPWO2007108290 A1 JP WO2007108290A1 JP 2008506209 A JP2008506209 A JP 2008506209A JP 2008506209 A JP2008506209 A JP 2008506209A JP WO2007108290 A1 JPWO2007108290 A1 JP WO2007108290A1
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- fluid
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- bump
- wiring board
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
14 流動体(樹脂)
16 導電性粒子(はんだ粉)
17 第1領域
18 主面
19 バンプ
20 凹部(溝)
30 気泡
31 配線基板
32 電極
40 基板(板状部材)
41 電極パターン
50 ステージ
52 ヘッダ
53 吸着機構
60 加熱機構(ヒータ)
70 ディスペンサ
72 ニードル部材
74 スキージ
75 ブレード装置
80 洗浄装置
100 バンプ形成装置
T=K・(S/L)・η・Fs(Kは定数)
上記の説明のように、この方法は、樹脂14の界面張力による自己集合を利用して、電極32上に樹脂14を自己整合的に形成するものであるが、かかる界面張力による自己集合は、配線基板31表面に形成された電極32が凸状に形成されているが故に、配線基板31と基板40間に形成されたギャップの中で狭くなっている電極32上にて起きる現象を利用したものと言える。
VA:VB≒SA:SB・・・(1)
ここで、SAは配線基板31の電極32の総面積、SBは配線基板31の所定領域(具体的には、上述の第1領域17)の面積をそれぞれ表す。これにより、樹脂14中に含まれる導電性粒子16の含有量は、以下のような式(2)で表される。
(導電性粒子16の含有量)=SA/SB×100[体積%]・・・(2)
よって、樹脂14中に含まれる導電性粒子16の最適な含有量は、概ね、以下のような式(3)に基づいて設定することができる。
(導電性粒子16の含有量)=SA/SB×100±α[体積%]・・・(3)
なお、上記パラメータ(±α)は、導電性粒子16が配線基板31の電極32上に自己集合する際の過不足分を調整するためのもので、種々の条件により決めることができる。
図14に示した配置(ペリフェラル配置)・・・0.5〜5体積%
図15に示した配置(エリアアレイ配置)・・・15〜30%体積%
このことから、電極32上に必要とするバンプ19を形成するには、樹脂14中に分散する導電性粒子16は、0.5〜30体積%の割合で樹脂14中に含有していれば足りることになる。
T=K・(S/L)・η・Fs (Kは定数)
上記の説明のように、この方法は、樹脂14の界面張力による自己集合を利用して、電極32上に樹脂14を自己整合的に形成するものであるが、かかる界面張力による自己集合は、配線基板31表面に形成された電極32が凸状に形成されているが故に、配線基板31と基板40間に形成されたギャップの中で狭くなっている電極32上にて起きる現象を利用したものと言える。
ここで、SAは配線基板31の電極32の総面積、SBは配線基板31の所定領域(具体的には、上述の第1領域17)の面積をそれぞれ表す。これにより、樹脂14中に含まれる導電性粒子16の含有量は、以下のような式(2)で表される。
よって、樹脂14中に含まれる導電性粒子16の最適な含有量は、概ね、以下のような式(3)に基づいて設定することができる。
なお、上記パラメータ(±α)は、導電性粒子16が配線基板31の電極32上に自己集合する際の過不足分を調整するためのもので、種々の条件により決めることができる。
図15に示した配置(エリアアレイ配置)・・・15〜30%体積%
このことから、電極32上に必要とするバンプ19を形成するには、樹脂14中に分散する導電性粒子16は、0.5〜30体積%の割合で樹脂14中に含有していれば足りることになる。
14 流動体(樹脂)
16 導電性粒子(はんだ粉)
17 第1領域
18 主面
19 バンプ
20 凹部(溝)
30 気泡
31 配線基板
32 電極
40 基板(板状部材)
41 電極パターン
50 ステージ
52 ヘッダ
53 吸着機構
60 加熱機構(ヒータ)
70 ディスペンサ
72 ニードル部材
74 スキージ
75 ブレード装置
80 洗浄装置
100 バンプ形成装置
Claims (20)
- 配線基板の電極上にバンプを形成する方法であって、
配線基板のうち電極を含む第1領域の上に、導電性粒子と気泡発生剤を含有した流動体を供給する工程(a)と、
主面上に突起面が形成された基板を、当該突起面が前記配線基板の第1領域に対向するように配置する工程(b)と、
前記流動体を加熱して、該流動体中に含有する前記気泡発生剤から気泡を発生させる工程(c)と、
前記流動体を加熱して、該流動体中に含有する前記導電性粒子を溶融する工程(d)と
を含み、
前記工程(c)において、前記流動体は、前記気泡発生剤から発生した気泡によって、前記電極上に自己集合し、
前記工程(d)において、前記電極上に自己集合した前記流動体中に含有する導電粒子が溶融することによって、前記電極上にバンプを形成する、バンプ形成方法。 - 前記工程(a)において、前記流動体が供給される前記第1領域は、前記配線基板の一部の領域である、請求項1に記載のバンプ形成方法。
- 前記基板は、透光性基板である、請求項1に記載のバンプ形成方法。
- 前記透光性基板は、ガラス基板である、請求項3に記載のバンプ形成方法。
- 前記基板の突起面には、前記電極に対向する位置に凸状パターン又は電極パターンが形成されている、請求項1に記載のバンプ形成方法。
- 前記流動体に含有されている前記気泡発生剤は、前記工程(c)において、前記流動体が加熱されたときに沸騰する材料、または、熱分解することにより気体を発生する材料からなる、請求項1に記載のバンプ形成方法。
- 前記工程(c)において、前記配線基板上に供給された前記流動体を前記基板の前記突起面で当接させながら、前記流動体を加熱する、請求項1に記載のバンプ形成方法。
- 前記工程(c)において、前記配線基板上に形成された前記電極と前記基板の前記突起面との間に隙間が設けられている、請求項7に記載のバンプ形成方法。
- 前記工程(c)において、前記隙間の大きさが変動する、請求項8に記載のバンプ形成方法。
- 前記隙間は、前記導電性粒子の粒径よりも広い、請求項8または9に記載のバンプ形成。
- 前記工程(c)において、前記気泡発生剤から発生した気泡は、前記基板と前記配線基板との間に設けられた隙間の周辺部から、外部に排出される、請求項1に記載のバンプ形成方法。
- 前記工程(d)の後、前記基板を除去する工程をさらに包含する、請求項1に記載のバンプ形成方法。
- 前記基板は、前記配線基板の鉛直上方に配置される、請求項1に記載のバンプ形成方法。
- 配線基板の電極上にバンプを形成する方法であって、
前記配線基板の一部のうち電極を含む第1領域の上に、導電性粒子と気泡発生剤を含有した流動体を供給する工程(a)と、
主面上に凹部が形成され基板を、当該凹部が前記配線基板の第1領域の周囲を囲むように配置する工程(b)と、
前記流動体を加熱して、該流動体中に含有する前記気泡発生剤から気泡を発生させる工程(c)と、
前記流動体を加熱して、該流動体中に含有する前記導電性粒子を溶融する工程(d)と
を含み、
前記工程(c)において、前記流動体は、前記気泡発生剤から発生した気泡によって、前記電極上に自己集合し、
前記工程(d)において、前記電極上に自己集合した前記流動体中に含有する導電粒子が溶融することによって、前記電極上にバンプを形成する、バンプ形成方法。 - 前記工程(a)において、前記流動体が供給される前記第1領域は、前記配線基板の一部の領域である、請求項14に記載のバンプ形成方法。
- 請求項1または14に記載のバンプ形成方法により配線基板の電極上にバンプを形成する装置であって、
前記配線基板を載置するステージと、
主面上に突起面または凹部が設けられた基板を保持するヘッダーと、
前記ステージまたは前記保持部を加熱する加熱機構と
を備え、
前記ステージに載置された前記配線基板の電極を含む第1領域の上に、導電性粒子及び気泡発生剤を含有した流動体が供給され、
前記ヘッダーで保持された前記基板が、前記突起面が前記配線基板の第1領域に対向するように、または前記凹部が前記配線基板の第1領域の周囲を囲むように配置され、
前記加熱機構により前記流動体が加熱されて、該流動体中に含有する前記気泡発生剤から発生した気泡により前記流動体が前記電極上に自己集合し、
前記加熱機構により前記流動体がさらに加熱されて、前記電極上に自己集合した前記流動体中に含有する前記導電粒子が溶融することによって、前記電極上にバンプが形成される、バンプ形成装置。 - 配線基板の電極上にバンプを形成するバンプ形成装置であって、
前記配線基板を載置するステージと、
前記ステージに対向して配置される板状部材を保持するヘッダーと、
前記ステージまたは前記ヘッダーを加熱する加熱機構と
を備え、
前記ヘッダーは、前記ステージに対して上下動可能な機構を有し、
前記ステージに載置された前記配線基板上に、導電性粒子及び気泡発生剤を含有した流動体が供給され、
前記ヘッダーで保持された前記板状部材が、前記配線基板上に供給された前記流動体に当接して配置され、
前記加熱機構により前記流動体が加熱されて、該流動体中に含有する前記気泡発生剤から発生した気泡により前記流動体が前記電極上に自己集合し、
前記加熱機構により前記流動体がさらに加熱されて、前記電極上に自己集合した前記流動体中に含有する前記導電粒子が溶融することによって、前記電極上にバンプが形成される、バンプ形成装置。 - 前記導電性粒子及び気泡発生剤を含有した流動体を付与するディスペンサをさらに備え、
前記流動体は、前記ディスペンサにより前記配線基板上に供給される、請求項17に記載のバンプ形成装置。 - 前記加熱機構は、前記ステージ及び前記ヘッダーに設けられており、
前記加熱機構により前記流動体を加熱する際、前記ステージは一定温度に加熱され、前記ヘッダーは昇温加熱される、請求項17に記載のバンプ形成装置。 - 前記ヘッダーは、100℃/秒以上の昇温速度で加熱される、請求項17に記載のバンプ形成装置。
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US20090229120A1 (en) | 2009-09-17 |
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EP1996002A4 (en) | 2011-06-15 |
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