JPS646543B2 - - Google Patents
Info
- Publication number
- JPS646543B2 JPS646543B2 JP17932180A JP17932180A JPS646543B2 JP S646543 B2 JPS646543 B2 JP S646543B2 JP 17932180 A JP17932180 A JP 17932180A JP 17932180 A JP17932180 A JP 17932180A JP S646543 B2 JPS646543 B2 JP S646543B2
- Authority
- JP
- Japan
- Prior art keywords
- spin
- film
- glass film
- heat treatment
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932180A JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932180A JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57103333A JPS57103333A (en) | 1982-06-26 |
| JPS646543B2 true JPS646543B2 (enrdf_load_stackoverflow) | 1989-02-03 |
Family
ID=16063785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17932180A Granted JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103333A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164342A (ja) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | 絶縁膜形成方法 |
| JP2805243B2 (ja) * | 1990-08-16 | 1998-09-30 | アプライドマテリアルズジャパン 株式会社 | 析出発生防止方法 |
| WO2004012252A1 (ja) * | 2002-07-30 | 2004-02-05 | Tokyo Electron Limited | 絶縁膜の形成方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542070A (en) * | 1977-06-07 | 1979-01-09 | Toshiba Corp | Manufacture for semiconductor element |
| ATE441T1 (de) * | 1978-06-26 | 1981-12-15 | Contraves Ag | Verfahren zur digitalen interpolation einer periode eines dreiphasigen analogsignals. |
-
1980
- 1980-12-18 JP JP17932180A patent/JPS57103333A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57103333A (en) | 1982-06-26 |
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