JPS6461933A - Integrated circuit device and its manufacture - Google Patents
Integrated circuit device and its manufactureInfo
- Publication number
- JPS6461933A JPS6461933A JP63147081A JP14708188A JPS6461933A JP S6461933 A JPS6461933 A JP S6461933A JP 63147081 A JP63147081 A JP 63147081A JP 14708188 A JP14708188 A JP 14708188A JP S6461933 A JPS6461933 A JP S6461933A
- Authority
- JP
- Japan
- Prior art keywords
- steps
- conductive layer
- insulator
- layer
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012212 insulator Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
- H01L23/4855—Overhang structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/087,478 US4839715A (en) | 1987-08-20 | 1987-08-20 | Chip contacts without oxide discontinuities |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6461933A true JPS6461933A (en) | 1989-03-08 |
JPH0577338B2 JPH0577338B2 (ja) | 1993-10-26 |
Family
ID=22205430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63147081A Granted JPS6461933A (en) | 1987-08-20 | 1988-06-16 | Integrated circuit device and its manufacture |
Country Status (6)
Country | Link |
---|---|
US (1) | US4839715A (ja) |
EP (1) | EP0303812A1 (ja) |
JP (1) | JPS6461933A (ja) |
AU (1) | AU608042B2 (ja) |
BR (1) | BR8802944A (ja) |
CA (1) | CA1277435C (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6365489B1 (en) * | 1999-06-15 | 2002-04-02 | Micron Technology, Inc. | Creation of subresolution features via flow characteristics |
US8435873B2 (en) * | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1910736C3 (de) * | 1969-03-03 | 1978-05-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens |
US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
US4028206A (en) * | 1976-03-10 | 1977-06-07 | William James King | Method for cool deposition of layers of materials onto a substrate |
US4307132A (en) * | 1977-12-27 | 1981-12-22 | International Business Machines Corp. | Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer |
GB1595659A (en) * | 1978-05-25 | 1981-08-12 | Standard Telephones Cables Ltd | Providing conductive tracks on semiconductor devices |
US4214018A (en) * | 1978-08-14 | 1980-07-22 | Rca Corporation | Method for making adherent pinhole free aluminum films on pyroelectric and/or piezoelectric substrates |
US4495221A (en) * | 1982-10-26 | 1985-01-22 | Signetics Corporation | Variable rate semiconductor deposition process |
US4525221A (en) * | 1984-05-16 | 1985-06-25 | Rca Corporation | Alloying of aluminum metallization |
-
1987
- 1987-08-20 US US07/087,478 patent/US4839715A/en not_active Expired - Fee Related
-
1988
- 1988-06-16 JP JP63147081A patent/JPS6461933A/ja active Granted
- 1988-06-16 BR BR8802944A patent/BR8802944A/pt not_active Application Discontinuation
- 1988-06-30 CA CA000570925A patent/CA1277435C/en not_active Expired - Fee Related
- 1988-07-05 EP EP88110698A patent/EP0303812A1/en not_active Ceased
- 1988-08-11 AU AU20962/88A patent/AU608042B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CA1277435C (en) | 1990-12-04 |
AU2096288A (en) | 1989-02-23 |
AU608042B2 (en) | 1991-03-21 |
BR8802944A (pt) | 1990-01-23 |
US4839715A (en) | 1989-06-13 |
EP0303812A1 (en) | 1989-02-22 |
JPH0577338B2 (ja) | 1993-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2162189A1 (en) | Insulator for integrated circuits and process | |
EP0297319A3 (en) | Copper oxide ceramic conductive and superconductive thick films, and processes for film preparation | |
JPS6461933A (en) | Integrated circuit device and its manufacture | |
JPS57153427A (en) | Manufacture of thin film device | |
JPS5430785A (en) | Manufacture of semiconductor device | |
JPS6465718A (en) | Manufacture of ceramic superconductive wire | |
JPS6449251A (en) | Manufacture of groove-shaped capacitor | |
JPS54156490A (en) | Forming method of current path in semiconductor | |
JPS6469027A (en) | Manufacture of semiconductor device | |
JPS59215764A (ja) | 半導体装置用キヤパシタの製造方法 | |
JPS53142442A (en) | Manufacturing of insulated conductor | |
JPS5768069A (en) | Manufacture of semiconductor device | |
JPS6410647A (en) | Manufacture of semiconductor device | |
JPS5685840A (en) | Manufacture of semiconductor device | |
JPS5776863A (en) | Manufacture of semiconductor device | |
JPS6437036A (en) | Manufacture of semiconductor device | |
SU1552933A1 (ru) | Способ изготовления кремниевых многослойных структур | |
GB1419906A (en) | Semiconductor devices manufacture | |
JPS5784156A (en) | Lead frame and its manufacture | |
GB1438559A (en) | Method for manufacturing a composite sintered structure | |
JPS57199270A (en) | Photoelectric converter | |
WO2004006293A3 (en) | Method of annealing electrically conductive zinc oxide films | |
SU1426352A1 (ru) | Двуслойная диэлектрическая структура и способ ее получения | |
JPS5457955A (en) | Production of semiconductor element | |
JPS6424444A (en) | Manufacture of semiconductor device |