JPS57199270A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS57199270A
JPS57199270A JP56084796A JP8479681A JPS57199270A JP S57199270 A JPS57199270 A JP S57199270A JP 56084796 A JP56084796 A JP 56084796A JP 8479681 A JP8479681 A JP 8479681A JP S57199270 A JPS57199270 A JP S57199270A
Authority
JP
Japan
Prior art keywords
film
glass
region
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56084796A
Other languages
Japanese (ja)
Other versions
JPS6248912B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP56084796A priority Critical patent/JPS57199270A/en
Publication of JPS57199270A publication Critical patent/JPS57199270A/en
Publication of JPS6248912B2 publication Critical patent/JPS6248912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To improve the production yield by a method wherein the opposite electrode provided on the illuminated side are formed into one body by means of providing the antireflection film and the electrodes with the mixture. CONSTITUTION:The region 6 to be the photoelectric converter and the peripheral region 7 are separately formed on the semiconductor 1 which is oxidized in the wet oxygen leaving the silicon oxide 3 on the region 7 only. Then the phosphorus glass 4 is coated to form the inverse conductive type semiconductor layer 5. Said glass 4 and said layer 5 are heat-treated and further heated in the wet oxygen to substitute the phosphorus glass introducing steam then to oxidize and remove the immovable material layer formed on the surface. Firstly the glass 4 and film 3 are moved to form the antireflection film 8 comprising the metallic oxide and then to provide the opposite electrode 9. Secondly the film 8, electrode 9 are heated and sintered to make a mixture forming said film 8, said electrode 9 and the semiconductor 5 into one body.
JP56084796A 1981-06-02 1981-06-02 Photoelectric converter Granted JPS57199270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084796A JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084796A JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS57199270A true JPS57199270A (en) 1982-12-07
JPS6248912B2 JPS6248912B2 (en) 1987-10-16

Family

ID=13840658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084796A Granted JPS57199270A (en) 1981-06-02 1981-06-02 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS57199270A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500392A (en) * 1983-01-10 1985-03-22 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション How to manufacture solar cells
WO2014096443A1 (en) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for doping semiconductor substrates, and doped semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216110A (en) * 1975-07-28 1977-02-07 Toa Tokushu Denki Kk Signal sound distributor in time sharing exchanger

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216110A (en) * 1975-07-28 1977-02-07 Toa Tokushu Denki Kk Signal sound distributor in time sharing exchanger

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60500392A (en) * 1983-01-10 1985-03-22 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション How to manufacture solar cells
JPH057872B2 (en) * 1983-01-10 1993-01-29 Mobil Solar Energy Corp
WO2014096443A1 (en) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for doping semiconductor substrates, and doped semiconductor substrate

Also Published As

Publication number Publication date
JPS6248912B2 (en) 1987-10-16

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