JPS6439749A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6439749A
JPS6439749A JP19685187A JP19685187A JPS6439749A JP S6439749 A JPS6439749 A JP S6439749A JP 19685187 A JP19685187 A JP 19685187A JP 19685187 A JP19685187 A JP 19685187A JP S6439749 A JPS6439749 A JP S6439749A
Authority
JP
Japan
Prior art keywords
oxide film
resist
end portion
film pattern
slanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19685187A
Other languages
English (en)
Other versions
JP2544937B2 (ja
Inventor
Yoshiki Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62196851A priority Critical patent/JP2544937B2/ja
Publication of JPS6439749A publication Critical patent/JPS6439749A/ja
Application granted granted Critical
Publication of JP2544937B2 publication Critical patent/JP2544937B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP62196851A 1987-08-05 1987-08-05 半導体装置およびその製造方法 Expired - Lifetime JP2544937B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62196851A JP2544937B2 (ja) 1987-08-05 1987-08-05 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62196851A JP2544937B2 (ja) 1987-08-05 1987-08-05 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6439749A true JPS6439749A (en) 1989-02-10
JP2544937B2 JP2544937B2 (ja) 1996-10-16

Family

ID=16364713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62196851A Expired - Lifetime JP2544937B2 (ja) 1987-08-05 1987-08-05 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2544937B2 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120867A (ja) * 1987-11-04 1989-05-12 Seiko Epson Corp Mis型半導体装置の製造方法
JPH01214062A (ja) * 1988-02-22 1989-08-28 Seiko Epson Corp 半導体装置
JPH033324A (ja) * 1989-05-13 1991-01-09 Hyundai Electron Ind Co Ltd 半導体接続装置の製造方法
JPH05267339A (ja) * 1991-12-23 1993-10-15 Philips Gloeilampenfab:Nv 半導体デバイス及びその製造方法
JPH06224149A (ja) * 1992-12-19 1994-08-12 Gold Star Electron Co Ltd 半導体装置における金属配線用コンタクトホールの形成方法
EP1312589A1 (fr) * 2001-11-20 2003-05-21 Eurovia Procédé de traitement du machefer pour lutter contre le gonflement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933849A (ja) * 1982-08-20 1984-02-23 Toshiba Corp 半導体装置およびその製造方法
JPS60128642A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置の製造方法
JPS6223134A (ja) * 1985-07-24 1987-01-31 Hitachi Ltd 半導体集積回路装置の製造方法
JPS6240765A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933849A (ja) * 1982-08-20 1984-02-23 Toshiba Corp 半導体装置およびその製造方法
JPS60128642A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置の製造方法
JPS6223134A (ja) * 1985-07-24 1987-01-31 Hitachi Ltd 半導体集積回路装置の製造方法
JPS6240765A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120867A (ja) * 1987-11-04 1989-05-12 Seiko Epson Corp Mis型半導体装置の製造方法
JPH01214062A (ja) * 1988-02-22 1989-08-28 Seiko Epson Corp 半導体装置
JPH033324A (ja) * 1989-05-13 1991-01-09 Hyundai Electron Ind Co Ltd 半導体接続装置の製造方法
JPH05267339A (ja) * 1991-12-23 1993-10-15 Philips Gloeilampenfab:Nv 半導体デバイス及びその製造方法
JPH06224149A (ja) * 1992-12-19 1994-08-12 Gold Star Electron Co Ltd 半導体装置における金属配線用コンタクトホールの形成方法
EP1312589A1 (fr) * 2001-11-20 2003-05-21 Eurovia Procédé de traitement du machefer pour lutter contre le gonflement
FR2832428A1 (fr) * 2001-11-20 2003-05-23 Eurovia Procede de traitement du machefer pour lutter contre le gonflement

Also Published As

Publication number Publication date
JP2544937B2 (ja) 1996-10-16

Similar Documents

Publication Publication Date Title
JPS57170534A (en) Dry etching method for aluminum and aluminum alloy
KR950010018A (ko) 절연재로 채워진 홈에 의해 형성되는 필드 절연영역을 갖는 반도체 몸체를 포함한 반도체 장치 제조방법
JPS6439749A (en) Semiconductor device and manufacture thereof
US4908683A (en) Technique for elimination of polysilicon stringers in direct moat field oxide structure
JPS5487172A (en) Manufacture for simiconductor device
US4702000A (en) Technique for elimination of polysilicon stringers in direct moat field oxide structure
JPS54162490A (en) Manufacture of semiconductor device
KR960000227B1 (ko) 저부게이트 박막트랜지스터 제조방법
JPS55128830A (en) Method of working photoresist film
JPS5455378A (en) Production of semiconductor device
JPS6415951A (en) Manufacture of semiconductor device
JPS57177525A (en) Etching method for silicon oxide
KR960002761B1 (ko) 웨이퍼 클램프
JPS5447489A (en) Production of mos semiconductor device
JPS6420624A (en) Manufacture of semiconductor device
JPS57199237A (en) Manufacture of semiconductor device
JPS5254378A (en) Production of semiconductor device
JPS6421940A (en) Manufacture of semiconductor device
JPS5478668A (en) Manufacture of semiconductor device
JPS5553442A (en) Formation of electrode and wiring layer of semiconductor device
JPS5558550A (en) Manufacture of semiconductor device
JPS54116882A (en) Manufacture of semiconductor device
JPS55115330A (en) Manufacturing method of semiconductor device
JPS6489539A (en) Manufacture of semiconductor device
KR940016470A (ko) 경사면을 갖는 콘택홀 형성방법