JPS641935B2 - - Google Patents
Info
- Publication number
- JPS641935B2 JPS641935B2 JP22094782A JP22094782A JPS641935B2 JP S641935 B2 JPS641935 B2 JP S641935B2 JP 22094782 A JP22094782 A JP 22094782A JP 22094782 A JP22094782 A JP 22094782A JP S641935 B2 JPS641935 B2 JP S641935B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- glass layer
- deposited
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims description 23
- 239000011574 phosphorus Substances 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 35
- 230000003647 oxidation Effects 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000003017 phosphorus Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22094782A JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22094782A JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110136A JPS59110136A (ja) | 1984-06-26 |
| JPS641935B2 true JPS641935B2 (fr) | 1989-01-13 |
Family
ID=16759040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22094782A Granted JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110136A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251054A (ja) * | 1985-04-27 | 1986-11-08 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS63217645A (ja) * | 1987-03-06 | 1988-09-09 | Nec Corp | 多層金属配線を有する半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111772A (en) * | 1978-02-22 | 1979-09-01 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS54156469A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Manufacture for integrated circuit device |
| US4319260A (en) * | 1979-09-05 | 1982-03-09 | Texas Instruments Incorporated | Multilevel interconnect system for high density silicon gate field effect transistors |
-
1982
- 1982-12-15 JP JP22094782A patent/JPS59110136A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59110136A (ja) | 1984-06-26 |
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