JPS6415913A - Epitaxial growth method of substrate for high-brightness led - Google Patents
Epitaxial growth method of substrate for high-brightness ledInfo
- Publication number
- JPS6415913A JPS6415913A JP17183987A JP17183987A JPS6415913A JP S6415913 A JPS6415913 A JP S6415913A JP 17183987 A JP17183987 A JP 17183987A JP 17183987 A JP17183987 A JP 17183987A JP S6415913 A JPS6415913 A JP S6415913A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- growth method
- auzn
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 8
- 239000000758 substrate Substances 0.000 title abstract 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000007772 electrode material Substances 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/099—LED, multicolor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/108—Melt back
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17183987A JPS6415913A (en) | 1987-07-09 | 1987-07-09 | Epitaxial growth method of substrate for high-brightness led |
DE3851828T DE3851828T2 (de) | 1987-07-09 | 1988-07-06 | Verfahren zum epitaktischen wachstum eines substrats für hochbrillante led. |
EP88906070A EP0322465B1 (en) | 1987-07-09 | 1988-07-06 | Method of epitaxially growing a substrate for highly bright led |
US07/353,652 US4921817A (en) | 1987-07-09 | 1988-07-06 | Substrate for high-intensity led, and method of epitaxially growing same |
PCT/JP1988/000677 WO1989000769A1 (en) | 1987-07-09 | 1988-07-06 | Substrate for highly bright led and method of epitaxially growing the same |
KR89700422A KR970010570B1 (en) | 1987-07-09 | 1989-03-08 | Substrate for highly bright led and method of epitaxially growing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17183987A JPS6415913A (en) | 1987-07-09 | 1987-07-09 | Epitaxial growth method of substrate for high-brightness led |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415913A true JPS6415913A (en) | 1989-01-19 |
Family
ID=15930713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17183987A Pending JPS6415913A (en) | 1987-07-09 | 1987-07-09 | Epitaxial growth method of substrate for high-brightness led |
Country Status (6)
Country | Link |
---|---|
US (1) | US4921817A (ja) |
EP (1) | EP0322465B1 (ja) |
JP (1) | JPS6415913A (ja) |
KR (1) | KR970010570B1 (ja) |
DE (1) | DE3851828T2 (ja) |
WO (1) | WO1989000769A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088160A (ja) * | 2007-09-28 | 2009-04-23 | Dowa Electronics Materials Co Ltd | 発光ダイオードおよびその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0712094B2 (ja) * | 1988-10-19 | 1995-02-08 | 信越半導体株式会社 | 発光半導体素子用エピタキシャルウェーハの製造方法 |
US5235194A (en) * | 1989-09-28 | 1993-08-10 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with InGaAlP |
US5103271A (en) * | 1989-09-28 | 1992-04-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating the same |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
GB2318680B (en) | 1996-10-24 | 2001-11-07 | Univ Surrey | Optoelectronic semiconductor devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153186A (ja) * | 1984-01-20 | 1985-08-12 | Fujitsu Ltd | 発光ダイオ−ド |
JPS61104680A (ja) * | 1984-10-27 | 1986-05-22 | Toshiba Corp | 発光ダイオ−ドの製造方法 |
JPS61198789A (ja) * | 1985-02-28 | 1986-09-03 | Stanley Electric Co Ltd | 光半導体素子の連続製造方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3647579A (en) * | 1968-03-28 | 1972-03-07 | Rca Corp | Liquid phase double epitaxial process for manufacturing light emitting gallium phosphide devices |
NL6910274A (ja) * | 1969-07-04 | 1971-01-06 | ||
US3636617A (en) * | 1970-03-23 | 1972-01-25 | Monsanto Co | Method for fabricating monolithic light-emitting semiconductor diodes and arrays thereof |
DE2163075C2 (de) * | 1970-12-23 | 1982-03-04 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zur Herstellung von elektrolumineszierenden Halbleiterbauelementen |
JPS4894368A (ja) * | 1972-03-13 | 1973-12-05 | ||
FR2217068B1 (ja) * | 1973-02-13 | 1978-10-20 | Labo Electronique Physique | |
US4051061A (en) * | 1973-08-10 | 1977-09-27 | Philips Corp | Gallium phosphide light emitting semiconductive materials |
JPS518180A (ja) * | 1974-07-10 | 1976-01-22 | Mitsubishi Electric Corp | Tagenkagobutsuketsushohakubanno seizohoho |
US3993533A (en) * | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
JPS5286059A (en) * | 1976-01-13 | 1977-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Process for production and apparatus used for process of semiconductor device |
JPS5423391A (en) * | 1977-07-22 | 1979-02-21 | Nec Corp | Gallium-arsenic semiconductor element |
US4190813A (en) * | 1977-12-28 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
GB1602498A (en) * | 1978-05-31 | 1981-11-11 | Secr Defence | Fet devices and their fabrication |
US4168998A (en) * | 1978-12-06 | 1979-09-25 | Mitsubishi Monsanto Chemical Co. | Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder |
JPS55123126A (en) * | 1979-03-15 | 1980-09-22 | Nippon Telegr & Teleph Corp <Ntt> | Method for semiconductor crystal growth |
JPS6038036B2 (ja) * | 1979-04-23 | 1985-08-29 | 松下電器産業株式会社 | 電場発光素子 |
JPS55165688A (en) * | 1979-06-11 | 1980-12-24 | Fujitsu Ltd | Preparation of light emission semiconductor device |
JPS5635410A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Method and device for manufacturing semiconductor device |
US4226649A (en) * | 1979-09-11 | 1980-10-07 | The United States Of America As Represented By The Secretary Of The Navy | Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques |
US4230505A (en) * | 1979-10-09 | 1980-10-28 | Rca Corporation | Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal |
US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
JPS5728375A (en) * | 1980-07-28 | 1982-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
US4477294A (en) * | 1981-05-06 | 1984-10-16 | The United States Of America As Represented By The Secretary Of The Army | Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode |
US4421576A (en) * | 1981-09-14 | 1983-12-20 | Rca Corporation | Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate |
JPS5969977A (ja) * | 1982-10-15 | 1984-04-20 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JPS60198812A (ja) * | 1984-03-23 | 1985-10-08 | Nec Corp | 半導体発光素子の製造方法 |
FR2574601B1 (fr) * | 1984-12-11 | 1987-07-17 | Menigaux Louis | Procede de fabrication d'un laser a semi-conducteur a ruban enterre |
JPS61154124A (ja) * | 1984-12-27 | 1986-07-12 | Toshiba Corp | 半導体装置の製造方法 |
JPS61281561A (ja) * | 1985-06-06 | 1986-12-11 | Oki Electric Ind Co Ltd | 半導体面発光素子の製造方法 |
JPS61281560A (ja) * | 1985-06-06 | 1986-12-11 | Oki Electric Ind Co Ltd | 半導体面発光素子の製造方法 |
US4659400A (en) * | 1985-06-27 | 1987-04-21 | General Instrument Corp. | Method for forming high yield epitaxial wafers |
JPS62171167A (ja) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
JPS63304614A (ja) * | 1987-06-03 | 1988-12-12 | Matsushita Electric Ind Co Ltd | 半導体エピタキシャル成長方法 |
JPS63312685A (ja) * | 1987-06-16 | 1988-12-21 | Fujitsu Ltd | 発光ダイオ−ドの製造方法 |
-
1987
- 1987-07-09 JP JP17183987A patent/JPS6415913A/ja active Pending
-
1988
- 1988-07-06 WO PCT/JP1988/000677 patent/WO1989000769A1/ja active IP Right Grant
- 1988-07-06 US US07/353,652 patent/US4921817A/en not_active Expired - Fee Related
- 1988-07-06 EP EP88906070A patent/EP0322465B1/en not_active Expired - Lifetime
- 1988-07-06 DE DE3851828T patent/DE3851828T2/de not_active Expired - Fee Related
-
1989
- 1989-03-08 KR KR89700422A patent/KR970010570B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153186A (ja) * | 1984-01-20 | 1985-08-12 | Fujitsu Ltd | 発光ダイオ−ド |
JPS61104680A (ja) * | 1984-10-27 | 1986-05-22 | Toshiba Corp | 発光ダイオ−ドの製造方法 |
JPS61198789A (ja) * | 1985-02-28 | 1986-09-03 | Stanley Electric Co Ltd | 光半導体素子の連続製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088160A (ja) * | 2007-09-28 | 2009-04-23 | Dowa Electronics Materials Co Ltd | 発光ダイオードおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0322465A1 (en) | 1989-07-05 |
EP0322465B1 (en) | 1994-10-12 |
KR970010570B1 (en) | 1997-06-28 |
WO1989000769A1 (en) | 1989-01-26 |
EP0322465A4 (en) | 1989-10-04 |
US4921817A (en) | 1990-05-01 |
DE3851828T2 (de) | 1995-05-11 |
DE3851828D1 (de) | 1994-11-17 |
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