JPS5635410A - Method and device for manufacturing semiconductor device - Google Patents
Method and device for manufacturing semiconductor deviceInfo
- Publication number
- JPS5635410A JPS5635410A JP11020079A JP11020079A JPS5635410A JP S5635410 A JPS5635410 A JP S5635410A JP 11020079 A JP11020079 A JP 11020079A JP 11020079 A JP11020079 A JP 11020079A JP S5635410 A JPS5635410 A JP S5635410A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- gas
- vessel
- phase
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To avoid the generation of oxides and contamination, by continuously effecting liquid-phase growth and gas-phase growth in arbitrary order inside an identical tube when growing plural epitaxial layers on a semiconductor substrate. CONSTITUTION:A vessel 3 containing a source substance 4 for gas-phase epitaxial growth is set in a reaction tube 5. The substance 4 is heated by a heater 7 surrounding the peripheral surface of the tube 5. A liquid-phase epitaxial growing unit 2 is set at a distance from the vessel 3 in the tube 5. A semiconductor substrate 1 is housed in the recess of a support board provided on the growing unit 2. Containers for liquid-phase growing solutions 9, 9', which are slidably provided on the support board, are heated by a heater 8 installed outside the tube 5. Inlet pipes 24, 27 for feeding carrier gas and another inlet pipe 16 for feeding dopant gas are provided on the inlet side of the vessel 3. A carrier gas inlet/outlet pipe 6 is provided between the vessel and the unit 2. Another carrier gas inlet/outlet pipe 10 is installed downstream to the unit 2. Plural layers are thus grown on the substrate 1 so that gas-phase growth is the first and liquid-phase growth is the second or in the reverse order.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11020079A JPS5635410A (en) | 1979-08-31 | 1979-08-31 | Method and device for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11020079A JPS5635410A (en) | 1979-08-31 | 1979-08-31 | Method and device for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5635410A true JPS5635410A (en) | 1981-04-08 |
Family
ID=14529579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11020079A Pending JPS5635410A (en) | 1979-08-31 | 1979-08-31 | Method and device for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635410A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4902356A (en) * | 1988-01-21 | 1990-02-20 | Mitsubishi Monsanto Chemical Company | Epitaxial substrate for high-intensity led, and method of manufacturing same |
US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5286059A (en) * | 1976-01-13 | 1977-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Process for production and apparatus used for process of semiconductor device |
-
1979
- 1979-08-31 JP JP11020079A patent/JPS5635410A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5286059A (en) * | 1976-01-13 | 1977-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Process for production and apparatus used for process of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |
US4902356A (en) * | 1988-01-21 | 1990-02-20 | Mitsubishi Monsanto Chemical Company | Epitaxial substrate for high-intensity led, and method of manufacturing same |
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