JPS6399588A - 半導体レ−ザ装置およびその製造方法 - Google Patents
半導体レ−ザ装置およびその製造方法Info
- Publication number
- JPS6399588A JPS6399588A JP24580686A JP24580686A JPS6399588A JP S6399588 A JPS6399588 A JP S6399588A JP 24580686 A JP24580686 A JP 24580686A JP 24580686 A JP24580686 A JP 24580686A JP S6399588 A JPS6399588 A JP S6399588A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- face
- type
- active layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 238000005253 cladding Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 230000005855 radiation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24580686A JPS6399588A (ja) | 1986-10-15 | 1986-10-15 | 半導体レ−ザ装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24580686A JPS6399588A (ja) | 1986-10-15 | 1986-10-15 | 半導体レ−ザ装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6399588A true JPS6399588A (ja) | 1988-04-30 |
| JPH054832B2 JPH054832B2 (enrdf_load_stackoverflow) | 1993-01-20 |
Family
ID=17139117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24580686A Granted JPS6399588A (ja) | 1986-10-15 | 1986-10-15 | 半導体レ−ザ装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6399588A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3924197A1 (de) * | 1988-07-22 | 1990-04-05 | Mitsubishi Electric Corp | Halbleiterlaser |
| JP2017033990A (ja) * | 2015-07-29 | 2017-02-09 | 浜松ホトニクス株式会社 | 半導体レーザ素子 |
-
1986
- 1986-10-15 JP JP24580686A patent/JPS6399588A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3924197A1 (de) * | 1988-07-22 | 1990-04-05 | Mitsubishi Electric Corp | Halbleiterlaser |
| DE3924197C2 (de) * | 1988-07-22 | 1996-09-26 | Mitsubishi Electric Corp | Halbleiterlaser |
| JP2017033990A (ja) * | 2015-07-29 | 2017-02-09 | 浜松ホトニクス株式会社 | 半導体レーザ素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH054832B2 (enrdf_load_stackoverflow) | 1993-01-20 |
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