JPH054832B2 - - Google Patents
Info
- Publication number
- JPH054832B2 JPH054832B2 JP24580686A JP24580686A JPH054832B2 JP H054832 B2 JPH054832 B2 JP H054832B2 JP 24580686 A JP24580686 A JP 24580686A JP 24580686 A JP24580686 A JP 24580686A JP H054832 B2 JPH054832 B2 JP H054832B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- conductivity type
- cladding layer
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24580686A JPS6399588A (ja) | 1986-10-15 | 1986-10-15 | 半導体レ−ザ装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24580686A JPS6399588A (ja) | 1986-10-15 | 1986-10-15 | 半導体レ−ザ装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6399588A JPS6399588A (ja) | 1988-04-30 |
JPH054832B2 true JPH054832B2 (enrdf_load_stackoverflow) | 1993-01-20 |
Family
ID=17139117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24580686A Granted JPS6399588A (ja) | 1986-10-15 | 1986-10-15 | 半導体レ−ザ装置およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6399588A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2222307B (en) * | 1988-07-22 | 1992-04-01 | Mitsubishi Electric Corp | Semiconductor laser |
JP6603507B2 (ja) * | 2015-07-29 | 2019-11-06 | 浜松ホトニクス株式会社 | 半導体レーザ素子 |
-
1986
- 1986-10-15 JP JP24580686A patent/JPS6399588A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6399588A (ja) | 1988-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0486128A2 (en) | A semiconductor optical device and a fabricating method therefor | |
US4841532A (en) | Semiconductor laser | |
KR100232993B1 (ko) | 반도체 레이저장치 및 그 제조방법 | |
KR100773677B1 (ko) | 반도체 레이저 소자 및 그 제조 방법 | |
KR100895056B1 (ko) | 반도체 레이저장치 | |
EP0155151A2 (en) | A semiconductor laser | |
JPS6343908B2 (enrdf_load_stackoverflow) | ||
US4769821A (en) | High power semiconductor laser by means of lattice mismatch stress | |
JP2686306B2 (ja) | 半導体レーザ装置とその製造方法 | |
KR100789309B1 (ko) | 반도체 레이저 | |
JPH054832B2 (enrdf_load_stackoverflow) | ||
JP2879875B2 (ja) | 半導体レーザ素子およびその製造方法 | |
JPH05211372A (ja) | 半導体レーザの製造方法 | |
JP2009076602A (ja) | 二波長半導体レーザ装置及びその製造方法 | |
US20010053166A1 (en) | Semiconductor laser and fabricating method of the same | |
JPS649749B2 (enrdf_load_stackoverflow) | ||
JPH08148753A (ja) | 半導体レーザ | |
JP2988552B2 (ja) | 半導体レーザ装置及びその製造方法 | |
JPH07122813A (ja) | 半導体レーザの製造方法 | |
KR100571843B1 (ko) | 레이저 다이오드 및 그 제조방법 | |
JPH08130342A (ja) | 半導体レーザ | |
JP3191359B2 (ja) | 半導体レーザー | |
JPS63120490A (ja) | 半導体レ−ザ | |
JPH0730190A (ja) | 半導体レーザおよびその製法 | |
JPH06125147A (ja) | 半導体レーザ装置及びその製造方法 |