JPS6237838B2 - - Google Patents
Info
- Publication number
- JPS6237838B2 JPS6237838B2 JP1420280A JP1420280A JPS6237838B2 JP S6237838 B2 JPS6237838 B2 JP S6237838B2 JP 1420280 A JP1420280 A JP 1420280A JP 1420280 A JP1420280 A JP 1420280A JP S6237838 B2 JPS6237838 B2 JP S6237838B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mirror surface
- asp
- inga
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 30
- 239000013078 crystal Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000003776 cleavage reaction Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000007017 scission Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1420280A JPS56111284A (en) | 1980-02-07 | 1980-02-07 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1420280A JPS56111284A (en) | 1980-02-07 | 1980-02-07 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56111284A JPS56111284A (en) | 1981-09-02 |
| JPS6237838B2 true JPS6237838B2 (enrdf_load_stackoverflow) | 1987-08-14 |
Family
ID=11854519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1420280A Granted JPS56111284A (en) | 1980-02-07 | 1980-02-07 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56111284A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6461081A (en) * | 1987-09-01 | 1989-03-08 | Japan Res Dev Corp | Distributed-feedback type semiconductor laser and manufacture thereof |
| US5222091A (en) * | 1990-09-14 | 1993-06-22 | Gte Laboratories Incorporated | Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor |
| US5082799A (en) * | 1990-09-14 | 1992-01-21 | Gte Laboratories Incorporated | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers |
-
1980
- 1980-02-07 JP JP1420280A patent/JPS56111284A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56111284A (en) | 1981-09-02 |
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