JPS622717B2 - - Google Patents
Info
- Publication number
- JPS622717B2 JPS622717B2 JP16301881A JP16301881A JPS622717B2 JP S622717 B2 JPS622717 B2 JP S622717B2 JP 16301881 A JP16301881 A JP 16301881A JP 16301881 A JP16301881 A JP 16301881A JP S622717 B2 JPS622717 B2 JP S622717B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- protrusion
- inp
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 10
- 230000007547 defect Effects 0.000 claims description 4
- 238000005253 cladding Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16301881A JPS5864084A (ja) | 1981-10-13 | 1981-10-13 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16301881A JPS5864084A (ja) | 1981-10-13 | 1981-10-13 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5864084A JPS5864084A (ja) | 1983-04-16 |
| JPS622717B2 true JPS622717B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=15765623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16301881A Granted JPS5864084A (ja) | 1981-10-13 | 1981-10-13 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5864084A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63215090A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| HU206565B (en) * | 1988-12-15 | 1992-11-30 | Mta Mueszaki Fiz Kutato Inteze | Inp/gainasp laser diode of burried active layer, having built-in blocking layer, of double heterostructure and method for making said laser diode by one-stage liquid epitaxial procedure |
-
1981
- 1981-10-13 JP JP16301881A patent/JPS5864084A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5864084A (ja) | 1983-04-16 |