JPS5864084A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS5864084A JPS5864084A JP16301881A JP16301881A JPS5864084A JP S5864084 A JPS5864084 A JP S5864084A JP 16301881 A JP16301881 A JP 16301881A JP 16301881 A JP16301881 A JP 16301881A JP S5864084 A JPS5864084 A JP S5864084A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- projection
- active
- current blocking
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 58
- 238000005253 cladding Methods 0.000 description 9
- 239000007791 liquid phase Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 101150110330 CRAT gene Proteins 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000282806 Rhinoceros Species 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16301881A JPS5864084A (ja) | 1981-10-13 | 1981-10-13 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16301881A JPS5864084A (ja) | 1981-10-13 | 1981-10-13 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5864084A true JPS5864084A (ja) | 1983-04-16 |
| JPS622717B2 JPS622717B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=15765623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16301881A Granted JPS5864084A (ja) | 1981-10-13 | 1981-10-13 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5864084A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63215090A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPH03136289A (ja) * | 1988-12-15 | 1991-06-11 | Magyar Tudomanyos Akad Mueszaki Fiz Kutato Intezet | ダブルヘテロ構造ダイオード及びその製法 |
-
1981
- 1981-10-13 JP JP16301881A patent/JPS5864084A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63215090A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPH03136289A (ja) * | 1988-12-15 | 1991-06-11 | Magyar Tudomanyos Akad Mueszaki Fiz Kutato Intezet | ダブルヘテロ構造ダイオード及びその製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622717B2 (enrdf_load_stackoverflow) | 1987-01-21 |
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