JPH0552676B2 - - Google Patents
Info
- Publication number
- JPH0552676B2 JPH0552676B2 JP1772584A JP1772584A JPH0552676B2 JP H0552676 B2 JPH0552676 B2 JP H0552676B2 JP 1772584 A JP1772584 A JP 1772584A JP 1772584 A JP1772584 A JP 1772584A JP H0552676 B2 JPH0552676 B2 JP H0552676B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- active layer
- semiconductor layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005253 cladding Methods 0.000 claims description 16
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1772584A JPS60163487A (ja) | 1984-02-03 | 1984-02-03 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1772584A JPS60163487A (ja) | 1984-02-03 | 1984-02-03 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60163487A JPS60163487A (ja) | 1985-08-26 |
| JPH0552676B2 true JPH0552676B2 (enrdf_load_stackoverflow) | 1993-08-06 |
Family
ID=11951718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1772584A Granted JPS60163487A (ja) | 1984-02-03 | 1984-02-03 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60163487A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2614714B2 (ja) * | 1986-05-28 | 1997-05-28 | フアナツク株式会社 | 倣い加工による荒どり加工方法 |
| JPH06232099A (ja) | 1992-09-10 | 1994-08-19 | Mitsubishi Electric Corp | 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法 |
| US10650319B2 (en) | 2015-02-06 | 2020-05-12 | Northrop Grumman Systems Corporation | Flux control of qubit under resonant excitation |
| US10756712B2 (en) | 2017-11-13 | 2020-08-25 | Northrop Grumman Systems Corporation | RQL phase-mode flip-flop |
| US10554207B1 (en) | 2018-07-31 | 2020-02-04 | Northrop Grumman Systems Corporation | Superconducting non-destructive readout circuits |
| US10615783B2 (en) | 2018-07-31 | 2020-04-07 | Northrop Grumman Systems Corporation | RQL D flip-flops |
| US11201608B2 (en) | 2020-04-24 | 2021-12-14 | Northrop Grumman Systems Corporation | Superconducting latch system |
-
1984
- 1984-02-03 JP JP1772584A patent/JPS60163487A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60163487A (ja) | 1985-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0552676B2 (enrdf_load_stackoverflow) | ||
| JPH07112091B2 (ja) | 埋め込み型半導体レ−ザの製造方法 | |
| JPH05327112A (ja) | 半導体レーザの製造方法 | |
| JP2687495B2 (ja) | 半導体レーザの製造方法 | |
| JPS6223191A (ja) | リツジ型半導体レ−ザ装置の製造方法 | |
| JPS5834988A (ja) | 半導体レ−ザの製造方法 | |
| JPH037153B2 (enrdf_load_stackoverflow) | ||
| JPH05226774A (ja) | 半導体レーザ素子とその製造方法 | |
| JP2847770B2 (ja) | 半導体レーザ共振器端面の保護層の形成方法 | |
| JPS6344311B2 (enrdf_load_stackoverflow) | ||
| JPS62179790A (ja) | 半導体レ−ザ | |
| JPH0710019B2 (ja) | 埋込み構造半導体レ−ザの製造方法 | |
| JPS6390879A (ja) | 半導体レ−ザの製造方法 | |
| JPH11354880A (ja) | 半導体レーザ素子およびその製造方法 | |
| JPS627185A (ja) | 半導体レ−ザの製造法 | |
| JPS6354234B2 (enrdf_load_stackoverflow) | ||
| JPH01293686A (ja) | 半導体レーザ素子の製造方法 | |
| JPH01215087A (ja) | 半導体発光素子 | |
| JPS6181688A (ja) | 分布反射型半導体レ−ザ | |
| JPH0897501A (ja) | 半導体装置の作製方法 | |
| JPS5864084A (ja) | 半導体レ−ザ | |
| JPS62286294A (ja) | 半導体レ−ザの製造方法 | |
| JPH09307185A (ja) | 半導体レ−ザ素子の製造方法 | |
| JPH0632338B2 (ja) | 埋め込み型半導体レ−ザ | |
| JPH0614576B2 (ja) | 半導体素子の製造方法 |