JPH0449791B2 - - Google Patents

Info

Publication number
JPH0449791B2
JPH0449791B2 JP58000662A JP66283A JPH0449791B2 JP H0449791 B2 JPH0449791 B2 JP H0449791B2 JP 58000662 A JP58000662 A JP 58000662A JP 66283 A JP66283 A JP 66283A JP H0449791 B2 JPH0449791 B2 JP H0449791B2
Authority
JP
Japan
Prior art keywords
layer
active layer
current blocking
semiconductor
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58000662A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59125686A (ja
Inventor
Isao Kobayashi
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP66283A priority Critical patent/JPS59125686A/ja
Publication of JPS59125686A publication Critical patent/JPS59125686A/ja
Publication of JPH0449791B2 publication Critical patent/JPH0449791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP66283A 1983-01-06 1983-01-06 半導体レ−ザ Granted JPS59125686A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP66283A JPS59125686A (ja) 1983-01-06 1983-01-06 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP66283A JPS59125686A (ja) 1983-01-06 1983-01-06 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS59125686A JPS59125686A (ja) 1984-07-20
JPH0449791B2 true JPH0449791B2 (enrdf_load_stackoverflow) 1992-08-12

Family

ID=11479932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP66283A Granted JPS59125686A (ja) 1983-01-06 1983-01-06 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS59125686A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62230078A (ja) * 1986-03-31 1987-10-08 Nec Corp 埋込み型半導体レ−ザ素子
JPS63215090A (ja) * 1987-03-04 1988-09-07 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712580A (en) * 1980-06-26 1982-01-22 Nec Corp Manufacture of semiconductor light-emitting device

Also Published As

Publication number Publication date
JPS59125686A (ja) 1984-07-20

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