JPH0377675B2 - - Google Patents
Info
- Publication number
- JPH0377675B2 JPH0377675B2 JP3762482A JP3762482A JPH0377675B2 JP H0377675 B2 JPH0377675 B2 JP H0377675B2 JP 3762482 A JP3762482 A JP 3762482A JP 3762482 A JP3762482 A JP 3762482A JP H0377675 B2 JPH0377675 B2 JP H0377675B2
- Authority
- JP
- Japan
- Prior art keywords
- inp
- layer
- ingaasp
- groove
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57037624A JPS58154287A (ja) | 1982-03-10 | 1982-03-10 | 半導体発光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57037624A JPS58154287A (ja) | 1982-03-10 | 1982-03-10 | 半導体発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58154287A JPS58154287A (ja) | 1983-09-13 |
| JPH0377675B2 true JPH0377675B2 (enrdf_load_stackoverflow) | 1991-12-11 |
Family
ID=12502783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57037624A Granted JPS58154287A (ja) | 1982-03-10 | 1982-03-10 | 半導体発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58154287A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360763A (en) * | 1992-09-07 | 1994-11-01 | Nec Corporation | Method for fabricating an optical semiconductor device |
| KR20030026090A (ko) * | 2001-09-24 | 2003-03-31 | 주식회사 옵토웨이퍼테크 | 반도체 발광 칩 및 그의 제조방법과 반도체 발광소자 및그의 제조방법 |
-
1982
- 1982-03-10 JP JP57037624A patent/JPS58154287A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58154287A (ja) | 1983-09-13 |
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