JPS6358390B2 - - Google Patents
Info
- Publication number
- JPS6358390B2 JPS6358390B2 JP56179305A JP17930581A JPS6358390B2 JP S6358390 B2 JPS6358390 B2 JP S6358390B2 JP 56179305 A JP56179305 A JP 56179305A JP 17930581 A JP17930581 A JP 17930581A JP S6358390 B2 JPS6358390 B2 JP S6358390B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa stripe
- conductivity type
- layer
- laminated
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17930581A JPS5880889A (ja) | 1981-11-09 | 1981-11-09 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17930581A JPS5880889A (ja) | 1981-11-09 | 1981-11-09 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5880889A JPS5880889A (ja) | 1983-05-16 |
| JPS6358390B2 true JPS6358390B2 (enrdf_load_stackoverflow) | 1988-11-15 |
Family
ID=16063499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17930581A Granted JPS5880889A (ja) | 1981-11-09 | 1981-11-09 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5880889A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58121693A (ja) * | 1982-01-12 | 1983-07-20 | Sanyo Electric Co Ltd | 半導体レ−ザ |
| US4937836A (en) * | 1983-11-30 | 1990-06-26 | Sharp Kabushiki Kaisha | Semiconductor laser device and production method therefor |
| JPS6184087A (ja) * | 1984-10-02 | 1986-04-28 | Agency Of Ind Science & Technol | 多重量子井戸半導体レ−ザ及びその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52100885A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Production of semiconductor device by liquid epitaxial growth |
| JPS5521199A (en) * | 1978-07-31 | 1980-02-15 | Rca Corp | Semiconductor laser |
-
1981
- 1981-11-09 JP JP17930581A patent/JPS5880889A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5880889A (ja) | 1983-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4870468A (en) | Semiconductor light-emitting device and method of manufacturing the same | |
| JPS61190993A (ja) | 半導体レ−ザ素子の製造方法 | |
| JPS5940592A (ja) | 半導体レ−ザ素子 | |
| JPH0461514B2 (enrdf_load_stackoverflow) | ||
| JPH0474877B2 (enrdf_load_stackoverflow) | ||
| JPS6358390B2 (enrdf_load_stackoverflow) | ||
| US4841535A (en) | Semiconductor laser device | |
| JP3108183B2 (ja) | 半導体レーザ素子とその製造方法 | |
| JP3098582B2 (ja) | 半導体発光素子 | |
| JPH07312462A (ja) | 面発光レーザダイオードの製造方法，及び面発光レーザダイオード | |
| JPS61242091A (ja) | 半導体発光素子 | |
| JPS6148277B2 (enrdf_load_stackoverflow) | ||
| JPS6318874B2 (enrdf_load_stackoverflow) | ||
| JPH0682886B2 (ja) | 半導体レーザ装置の製造方法 | |
| JPS5834988A (ja) | 半導体レ−ザの製造方法 | |
| JPH0325037B2 (enrdf_load_stackoverflow) | ||
| JPS59200484A (ja) | 半導体レ−ザ | |
| JPH0449791B2 (enrdf_load_stackoverflow) | ||
| JPH0377675B2 (enrdf_load_stackoverflow) | ||
| JPS6318876B2 (enrdf_load_stackoverflow) | ||
| JPS6234473Y2 (enrdf_load_stackoverflow) | ||
| JPS5864084A (ja) | 半導体レ−ザ | |
| JPH02103989A (ja) | 半導体レーザアレイ及びその製造方法 | |
| JPH0810780B2 (ja) | 半導体レ−ザの製造方法 | |
| JPS63287082A (ja) | 半導体レ−ザ素子 |