JPS6318876B2 - - Google Patents
Info
- Publication number
- JPS6318876B2 JPS6318876B2 JP8704980A JP8704980A JPS6318876B2 JP S6318876 B2 JPS6318876 B2 JP S6318876B2 JP 8704980 A JP8704980 A JP 8704980A JP 8704980 A JP8704980 A JP 8704980A JP S6318876 B2 JPS6318876 B2 JP S6318876B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- cladding region
- active region
- cladding
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005253 cladding Methods 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8704980A JPS5712590A (en) | 1980-06-26 | 1980-06-26 | Buried type double heterojunction laser element |
US06/277,508 US4429397A (en) | 1980-06-26 | 1981-06-26 | Buried heterostructure laser diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8704980A JPS5712590A (en) | 1980-06-26 | 1980-06-26 | Buried type double heterojunction laser element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5712590A JPS5712590A (en) | 1982-01-22 |
JPS6318876B2 true JPS6318876B2 (enrdf_load_stackoverflow) | 1988-04-20 |
Family
ID=13904078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8704980A Granted JPS5712590A (en) | 1980-06-26 | 1980-06-26 | Buried type double heterojunction laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5712590A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0267688U (enrdf_load_stackoverflow) * | 1988-11-10 | 1990-05-22 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101750194B1 (ko) | 2016-02-15 | 2017-06-22 | 부경대학교 산학협력단 | 파장 변환 유리, 이의 제조 방법, 및 이를 포함하는 발광 장치 |
-
1980
- 1980-06-26 JP JP8704980A patent/JPS5712590A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0267688U (enrdf_load_stackoverflow) * | 1988-11-10 | 1990-05-22 |
Also Published As
Publication number | Publication date |
---|---|
JPS5712590A (en) | 1982-01-22 |
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