JPS6350874B2 - - Google Patents
Info
- Publication number
- JPS6350874B2 JPS6350874B2 JP57195254A JP19525482A JPS6350874B2 JP S6350874 B2 JPS6350874 B2 JP S6350874B2 JP 57195254 A JP57195254 A JP 57195254A JP 19525482 A JP19525482 A JP 19525482A JP S6350874 B2 JPS6350874 B2 JP S6350874B2
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- semiconductor
- layer
- semiconductor laser
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000005253 cladding Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19525482A JPS5986282A (ja) | 1982-11-09 | 1982-11-09 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19525482A JPS5986282A (ja) | 1982-11-09 | 1982-11-09 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5986282A JPS5986282A (ja) | 1984-05-18 |
| JPS6350874B2 true JPS6350874B2 (enrdf_load_stackoverflow) | 1988-10-12 |
Family
ID=16338069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19525482A Granted JPS5986282A (ja) | 1982-11-09 | 1982-11-09 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986282A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01175789A (ja) * | 1987-12-29 | 1989-07-12 | Inkiyuubeetaa Japan:Kk | 可視発光半導体レーザ装置 |
| JP2546126B2 (ja) * | 1993-04-06 | 1996-10-23 | 日本電気株式会社 | 半導体発光素子 |
-
1982
- 1982-11-09 JP JP19525482A patent/JPS5986282A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| TECHNICAL DISRLOSURE BULLETIN * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5986282A (ja) | 1984-05-18 |
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