JPS59125686A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS59125686A JPS59125686A JP66283A JP66283A JPS59125686A JP S59125686 A JPS59125686 A JP S59125686A JP 66283 A JP66283 A JP 66283A JP 66283 A JP66283 A JP 66283A JP S59125686 A JPS59125686 A JP S59125686A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- current
- crystal
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 230000000903 blocking effect Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 12
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 239000000243 solution Substances 0.000 abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 238000003486 chemical etching Methods 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP66283A JPS59125686A (ja) | 1983-01-06 | 1983-01-06 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP66283A JPS59125686A (ja) | 1983-01-06 | 1983-01-06 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59125686A true JPS59125686A (ja) | 1984-07-20 |
| JPH0449791B2 JPH0449791B2 (enrdf_load_stackoverflow) | 1992-08-12 |
Family
ID=11479932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP66283A Granted JPS59125686A (ja) | 1983-01-06 | 1983-01-06 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59125686A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62230078A (ja) * | 1986-03-31 | 1987-10-08 | Nec Corp | 埋込み型半導体レ−ザ素子 |
| JPS63215090A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712580A (en) * | 1980-06-26 | 1982-01-22 | Nec Corp | Manufacture of semiconductor light-emitting device |
-
1983
- 1983-01-06 JP JP66283A patent/JPS59125686A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712580A (en) * | 1980-06-26 | 1982-01-22 | Nec Corp | Manufacture of semiconductor light-emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62230078A (ja) * | 1986-03-31 | 1987-10-08 | Nec Corp | 埋込み型半導体レ−ザ素子 |
| JPS63215090A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0449791B2 (enrdf_load_stackoverflow) | 1992-08-12 |
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