JPS6387761A - ガリウム砒素集積回路のmim容量 - Google Patents
ガリウム砒素集積回路のmim容量Info
- Publication number
- JPS6387761A JPS6387761A JP61233615A JP23361586A JPS6387761A JP S6387761 A JPS6387761 A JP S6387761A JP 61233615 A JP61233615 A JP 61233615A JP 23361586 A JP23361586 A JP 23361586A JP S6387761 A JPS6387761 A JP S6387761A
- Authority
- JP
- Japan
- Prior art keywords
- gallium arsenide
- insulating film
- capacitance
- mim
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61233615A JPS6387761A (ja) | 1986-09-30 | 1986-09-30 | ガリウム砒素集積回路のmim容量 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61233615A JPS6387761A (ja) | 1986-09-30 | 1986-09-30 | ガリウム砒素集積回路のmim容量 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6387761A true JPS6387761A (ja) | 1988-04-19 |
JPH0573273B2 JPH0573273B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-14 |
Family
ID=16957820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61233615A Granted JPS6387761A (ja) | 1986-09-30 | 1986-09-30 | ガリウム砒素集積回路のmim容量 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6387761A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6251740B1 (en) | 1998-12-23 | 2001-06-26 | Lsi Logic Corporation | Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit |
US6341056B1 (en) | 2000-05-17 | 2002-01-22 | Lsi Logic Corporation | Capacitor with multiple-component dielectric and method of fabricating same |
US6342734B1 (en) | 2000-04-27 | 2002-01-29 | Lsi Logic Corporation | Interconnect-integrated metal-insulator-metal capacitor and method of fabricating same |
US6417535B1 (en) * | 1998-12-23 | 2002-07-09 | Lsi Logic Corporation | Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit |
US6441419B1 (en) | 1998-03-31 | 2002-08-27 | Lsi Logic Corporation | Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same |
US6504202B1 (en) | 2000-02-02 | 2003-01-07 | Lsi Logic Corporation | Interconnect-embedded metal-insulator-metal capacitor |
US6566186B1 (en) | 2000-05-17 | 2003-05-20 | Lsi Logic Corporation | Capacitor with stoichiometrically adjusted dielectric and method of fabricating same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6066851A (ja) * | 1983-09-22 | 1985-04-17 | Oki Electric Ind Co Ltd | 集積回路用コンデンサ及びその製造方法 |
JPS60178659A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS6136965A (ja) * | 1984-07-30 | 1986-02-21 | Toshiba Corp | 半導体メモリ装置 |
-
1986
- 1986-09-30 JP JP61233615A patent/JPS6387761A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6066851A (ja) * | 1983-09-22 | 1985-04-17 | Oki Electric Ind Co Ltd | 集積回路用コンデンサ及びその製造方法 |
JPS60178659A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS6136965A (ja) * | 1984-07-30 | 1986-02-21 | Toshiba Corp | 半導体メモリ装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6441419B1 (en) | 1998-03-31 | 2002-08-27 | Lsi Logic Corporation | Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same |
US6251740B1 (en) | 1998-12-23 | 2001-06-26 | Lsi Logic Corporation | Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit |
US6417535B1 (en) * | 1998-12-23 | 2002-07-09 | Lsi Logic Corporation | Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit |
US6504202B1 (en) | 2000-02-02 | 2003-01-07 | Lsi Logic Corporation | Interconnect-embedded metal-insulator-metal capacitor |
US6342734B1 (en) | 2000-04-27 | 2002-01-29 | Lsi Logic Corporation | Interconnect-integrated metal-insulator-metal capacitor and method of fabricating same |
US6341056B1 (en) | 2000-05-17 | 2002-01-22 | Lsi Logic Corporation | Capacitor with multiple-component dielectric and method of fabricating same |
US6566186B1 (en) | 2000-05-17 | 2003-05-20 | Lsi Logic Corporation | Capacitor with stoichiometrically adjusted dielectric and method of fabricating same |
Also Published As
Publication number | Publication date |
---|---|
JPH0573273B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-14 |
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