JPS6366062B2 - - Google Patents

Info

Publication number
JPS6366062B2
JPS6366062B2 JP58119133A JP11913383A JPS6366062B2 JP S6366062 B2 JPS6366062 B2 JP S6366062B2 JP 58119133 A JP58119133 A JP 58119133A JP 11913383 A JP11913383 A JP 11913383A JP S6366062 B2 JPS6366062 B2 JP S6366062B2
Authority
JP
Japan
Prior art keywords
semiconductor device
melting point
optical semiconductor
welded
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58119133A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6010757A (ja
Inventor
Manabu Bonshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58119133A priority Critical patent/JPS6010757A/ja
Publication of JPS6010757A publication Critical patent/JPS6010757A/ja
Publication of JPS6366062B2 publication Critical patent/JPS6366062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10W72/884—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
JP58119133A 1983-06-30 1983-06-30 半導体装置の製造方法 Granted JPS6010757A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119133A JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119133A JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6010757A JPS6010757A (ja) 1985-01-19
JPS6366062B2 true JPS6366062B2 (cg-RX-API-DMAC10.html) 1988-12-19

Family

ID=14753750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119133A Granted JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6010757A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7607560B2 (en) * 2004-05-14 2009-10-27 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
JP2015018873A (ja) * 2013-07-09 2015-01-29 日機装株式会社 半導体モジュール
JP6294418B2 (ja) 2016-09-01 2018-03-14 日機装株式会社 光半導体装置および光半導体装置の製造方法
CN112470295A (zh) * 2018-07-27 2021-03-09 Ａｇｃ株式会社 光学封装体

Also Published As

Publication number Publication date
JPS6010757A (ja) 1985-01-19

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