JPS6364904B2 - - Google Patents
Info
- Publication number
- JPS6364904B2 JPS6364904B2 JP9975581A JP9975581A JPS6364904B2 JP S6364904 B2 JPS6364904 B2 JP S6364904B2 JP 9975581 A JP9975581 A JP 9975581A JP 9975581 A JP9975581 A JP 9975581A JP S6364904 B2 JPS6364904 B2 JP S6364904B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- wiring
- layer
- insulating layer
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9975581A JPS582043A (ja) | 1981-06-29 | 1981-06-29 | 多層配線層の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9975581A JPS582043A (ja) | 1981-06-29 | 1981-06-29 | 多層配線層の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS582043A JPS582043A (ja) | 1983-01-07 |
| JPS6364904B2 true JPS6364904B2 (enrdf_load_stackoverflow) | 1988-12-14 |
Family
ID=14255795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9975581A Granted JPS582043A (ja) | 1981-06-29 | 1981-06-29 | 多層配線層の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS582043A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102241020B1 (ko) * | 2020-03-17 | 2021-04-19 | (주)화승코퍼레이션 | 마모 진행 정도의 단계별 확인이 가능한 컨베이어 벨트 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225529A (ja) * | 1983-06-06 | 1984-12-18 | Toshiba Corp | 絶縁層の平坦化方法 |
| JPH0699180B2 (ja) * | 1985-11-25 | 1994-12-07 | 松下電工株式会社 | 繊維セメントスラリ−組成物 |
| JPS63275118A (ja) * | 1987-05-07 | 1988-11-11 | Nec Corp | 半導体装置の製造方法 |
| JPH07114239B2 (ja) * | 1988-10-21 | 1995-12-06 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP6674371B2 (ja) | 2016-12-14 | 2020-04-01 | 株式会社トッパンＴｏｍｏｅｇａｗａオプティカルフィルム | 光学積層体、偏光板及び表示装置 |
-
1981
- 1981-06-29 JP JP9975581A patent/JPS582043A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102241020B1 (ko) * | 2020-03-17 | 2021-04-19 | (주)화승코퍼레이션 | 마모 진행 정도의 단계별 확인이 가능한 컨베이어 벨트 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS582043A (ja) | 1983-01-07 |
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