JPH0451050B2 - - Google Patents

Info

Publication number
JPH0451050B2
JPH0451050B2 JP59215606A JP21560684A JPH0451050B2 JP H0451050 B2 JPH0451050 B2 JP H0451050B2 JP 59215606 A JP59215606 A JP 59215606A JP 21560684 A JP21560684 A JP 21560684A JP H0451050 B2 JPH0451050 B2 JP H0451050B2
Authority
JP
Japan
Prior art keywords
film
titanium
wiring
aluminum
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59215606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6193629A (ja
Inventor
Hiromichi Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP21560684A priority Critical patent/JPS6193629A/ja
Publication of JPS6193629A publication Critical patent/JPS6193629A/ja
Publication of JPH0451050B2 publication Critical patent/JPH0451050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP21560684A 1984-10-15 1984-10-15 半導体装置の製造方法 Granted JPS6193629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21560684A JPS6193629A (ja) 1984-10-15 1984-10-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21560684A JPS6193629A (ja) 1984-10-15 1984-10-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6193629A JPS6193629A (ja) 1986-05-12
JPH0451050B2 true JPH0451050B2 (enrdf_load_stackoverflow) 1992-08-18

Family

ID=16675211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21560684A Granted JPS6193629A (ja) 1984-10-15 1984-10-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6193629A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19915348B4 (de) * 1999-04-06 2019-06-27 Schaeffler Technologies AG & Co. KG Gleitlager
JP4577095B2 (ja) * 2005-06-03 2010-11-10 東ソー株式会社 金属チタンのエッチング用組成物及びそれを用いたエッチング方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5847851B2 (ja) * 1975-02-26 1983-10-25 日本電気株式会社 チタン層を有する半導体素子の製造方法
JPS55138235A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of titanic etching solution and semiconductor device using this etching solution

Also Published As

Publication number Publication date
JPS6193629A (ja) 1986-05-12

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