JPS6356704B2 - - Google Patents
Info
- Publication number
- JPS6356704B2 JPS6356704B2 JP56084758A JP8475881A JPS6356704B2 JP S6356704 B2 JPS6356704 B2 JP S6356704B2 JP 56084758 A JP56084758 A JP 56084758A JP 8475881 A JP8475881 A JP 8475881A JP S6356704 B2 JPS6356704 B2 JP S6356704B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon nitride
- nitride layer
- low
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000005360 phosphosilicate glass Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084758A JPS57199224A (en) | 1981-06-02 | 1981-06-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084758A JPS57199224A (en) | 1981-06-02 | 1981-06-02 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57199224A JPS57199224A (en) | 1982-12-07 |
| JPS6356704B2 true JPS6356704B2 (ko) | 1988-11-09 |
Family
ID=13839577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56084758A Granted JPS57199224A (en) | 1981-06-02 | 1981-06-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199224A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2625839B1 (fr) * | 1988-01-13 | 1991-04-26 | Sgs Thomson Microelectronics | Procede de passivation d'un circuit integre |
| US6514882B2 (en) | 2001-02-19 | 2003-02-04 | Applied Materials, Inc. | Aggregate dielectric layer to reduce nitride consumption |
| JP2006043813A (ja) * | 2004-08-04 | 2006-02-16 | Denso Corp | 保護膜付きマイクロシステム構造体及びその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5390869A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5632732A (en) * | 1979-08-27 | 1981-04-02 | Mitsubishi Electric Corp | Semiconductor device |
-
1981
- 1981-06-02 JP JP56084758A patent/JPS57199224A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5390869A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5632732A (en) * | 1979-08-27 | 1981-04-02 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57199224A (en) | 1982-12-07 |
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