JPS6354769A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6354769A
JPS6354769A JP61093248A JP9324886A JPS6354769A JP S6354769 A JPS6354769 A JP S6354769A JP 61093248 A JP61093248 A JP 61093248A JP 9324886 A JP9324886 A JP 9324886A JP S6354769 A JPS6354769 A JP S6354769A
Authority
JP
Japan
Prior art keywords
film
semiconductor
single crystal
forming
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61093248A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0588543B2 (enrdf_load_stackoverflow
Inventor
Minoru Takahashi
稔 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61093248A priority Critical patent/JPS6354769A/ja
Publication of JPS6354769A publication Critical patent/JPS6354769A/ja
Publication of JPH0588543B2 publication Critical patent/JPH0588543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Recrystallisation Techniques (AREA)
JP61093248A 1986-04-24 1986-04-24 半導体装置の製造方法 Granted JPS6354769A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61093248A JPS6354769A (ja) 1986-04-24 1986-04-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61093248A JPS6354769A (ja) 1986-04-24 1986-04-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6354769A true JPS6354769A (ja) 1988-03-09
JPH0588543B2 JPH0588543B2 (enrdf_load_stackoverflow) 1993-12-22

Family

ID=14077206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61093248A Granted JPS6354769A (ja) 1986-04-24 1986-04-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6354769A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224255A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 液晶表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224255A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 液晶表示装置

Also Published As

Publication number Publication date
JPH0588543B2 (enrdf_load_stackoverflow) 1993-12-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term