JPS6350850Y2 - - Google Patents
Info
- Publication number
- JPS6350850Y2 JPS6350850Y2 JP17183181U JP17183181U JPS6350850Y2 JP S6350850 Y2 JPS6350850 Y2 JP S6350850Y2 JP 17183181 U JP17183181 U JP 17183181U JP 17183181 U JP17183181 U JP 17183181U JP S6350850 Y2 JPS6350850 Y2 JP S6350850Y2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- mos transistor
- gate
- gate polysilicon
- contact holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 35
- 229920005591 polysilicon Polymers 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17183181U JPS5877065U (ja) | 1981-11-18 | 1981-11-18 | 集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17183181U JPS5877065U (ja) | 1981-11-18 | 1981-11-18 | 集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5877065U JPS5877065U (ja) | 1983-05-24 |
| JPS6350850Y2 true JPS6350850Y2 (cs) | 1988-12-27 |
Family
ID=29963740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17183181U Granted JPS5877065U (ja) | 1981-11-18 | 1981-11-18 | 集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5877065U (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7956421B2 (en) * | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
-
1981
- 1981-11-18 JP JP17183181U patent/JPS5877065U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5877065U (ja) | 1983-05-24 |
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