JPS6349906B2 - - Google Patents

Info

Publication number
JPS6349906B2
JPS6349906B2 JP55189056A JP18905680A JPS6349906B2 JP S6349906 B2 JPS6349906 B2 JP S6349906B2 JP 55189056 A JP55189056 A JP 55189056A JP 18905680 A JP18905680 A JP 18905680A JP S6349906 B2 JPS6349906 B2 JP S6349906B2
Authority
JP
Japan
Prior art keywords
capacitor
insulating film
film
semiconductor substrate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55189056A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57113264A (en
Inventor
Nobuo Toyokura
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55189056A priority Critical patent/JPS57113264A/ja
Priority to DE8181305941T priority patent/DE3175085D1/de
Priority to EP81305941A priority patent/EP0055558B1/en
Publication of JPS57113264A publication Critical patent/JPS57113264A/ja
Priority to US06/894,509 priority patent/US4743953A/en
Publication of JPS6349906B2 publication Critical patent/JPS6349906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69393—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D64/0134—
    • H10D64/0135—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10P14/69392—
    • H10P14/69394—
    • H10P14/69395—
    • H10P32/1408—
    • H10P32/141—
    • H10P32/171—
    • H10P14/662—
    • H10P14/69433—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
JP55189056A 1980-12-29 1980-12-29 Manufacture of mis type capacitor Granted JPS57113264A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55189056A JPS57113264A (en) 1980-12-29 1980-12-29 Manufacture of mis type capacitor
DE8181305941T DE3175085D1 (en) 1980-12-29 1981-12-18 Method of manufacturing a semiconductor device
EP81305941A EP0055558B1 (en) 1980-12-29 1981-12-18 Method of manufacturing a semiconductor device
US06/894,509 US4743953A (en) 1980-12-29 1986-08-06 Random access memory cell with MIS capacitor having insulator of oxide of doped metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55189056A JPS57113264A (en) 1980-12-29 1980-12-29 Manufacture of mis type capacitor

Publications (2)

Publication Number Publication Date
JPS57113264A JPS57113264A (en) 1982-07-14
JPS6349906B2 true JPS6349906B2 (enExample) 1988-10-06

Family

ID=16234542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55189056A Granted JPS57113264A (en) 1980-12-29 1980-12-29 Manufacture of mis type capacitor

Country Status (4)

Country Link
US (1) US4743953A (enExample)
EP (1) EP0055558B1 (enExample)
JP (1) JPS57113264A (enExample)
DE (1) DE3175085D1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073852B2 (ja) * 1985-05-20 1995-01-18 日本電信電話株式会社 半導体装置およびその製造方法
IT1197776B (it) * 1986-07-15 1988-12-06 Gte Telecom Spa Processo per l'ottenimento di circuiti passivi a strato sottile con linee resistive a differenti resistenze di strato e circuito passivo realizzato con il processo suddetto
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
US5143861A (en) * 1989-03-06 1992-09-01 Sgs-Thomson Microelectronics, Inc. Method making a dynamic random access memory cell with a tungsten plug
US6639262B2 (en) 1993-12-10 2003-10-28 Symetrix Corporation Metal oxide integrated circuit on silicon germanium substrate
US5930584A (en) * 1996-04-10 1999-07-27 United Microelectronics Corp. Process for fabricating low leakage current electrode for LPCVD titanium oxide films
US5977582A (en) * 1997-05-23 1999-11-02 Lucent Technologies Inc. Capacitor comprising improved TaOx -based dielectric
SE515783C2 (sv) * 1997-09-11 2001-10-08 Ericsson Telefon Ab L M Elektriska anordningar jämte förfarande för deras tillverkning
JPH11195711A (ja) 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
JPH11195753A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
US6528856B1 (en) * 1998-12-15 2003-03-04 Intel Corporation High dielectric constant metal oxide gate dielectrics
JP4237332B2 (ja) * 1999-04-30 2009-03-11 株式会社東芝 半導体装置の製造方法
US6312378B1 (en) * 1999-06-03 2001-11-06 Cardiac Intelligence Corporation System and method for automated collection and analysis of patient information retrieved from an implantable medical device for remote patient care
JP5073136B2 (ja) * 2001-08-24 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置
US6816355B2 (en) 2001-09-13 2004-11-09 Seiko Epson Corporation Capacitor, semiconductor device, electro-optic device, method of manufacturing capacitor, method of manufacturing semiconductor device, and electronic apparatus
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
WO2008039845A2 (en) 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US10217825B2 (en) 2015-11-19 2019-02-26 Toyko Electron Limited Metal-insulator-semiconductor (MIS) contacts and method of forming
KR102721980B1 (ko) 2022-02-24 2024-10-25 삼성전자주식회사 기판 정렬 장치 및 이를 이용한 기판 정렬 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2555187A1 (de) * 1975-12-08 1977-06-16 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
JPS52113181A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Mis type semiconductor device
NL176415C (nl) * 1976-07-05 1985-04-01 Hitachi Ltd Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
US4200474A (en) * 1978-11-20 1980-04-29 Texas Instruments Incorporated Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
JPS5621372A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
DE3032632A1 (de) * 1980-08-29 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung integrierter dynamischer ram-eintransistor-speicherzellen

Also Published As

Publication number Publication date
US4743953A (en) 1988-05-10
JPS57113264A (en) 1982-07-14
EP0055558A2 (en) 1982-07-07
EP0055558A3 (en) 1983-10-05
EP0055558B1 (en) 1986-08-06
DE3175085D1 (en) 1986-09-11

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