JPS6346575B2 - - Google Patents
Info
- Publication number
- JPS6346575B2 JPS6346575B2 JP54109161A JP10916179A JPS6346575B2 JP S6346575 B2 JPS6346575 B2 JP S6346575B2 JP 54109161 A JP54109161 A JP 54109161A JP 10916179 A JP10916179 A JP 10916179A JP S6346575 B2 JPS6346575 B2 JP S6346575B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- potential
- frequency
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 87
- 150000002500 ions Chemical class 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 16
- 239000012212 insulator Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10916179A JPS5633839A (en) | 1979-08-29 | 1979-08-29 | Plasma treatment and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10916179A JPS5633839A (en) | 1979-08-29 | 1979-08-29 | Plasma treatment and device therefor |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1709388A Division JPS63211631A (ja) | 1988-01-29 | 1988-01-29 | プラズマ処理装置 |
| JP1709288A Division JPS63211630A (ja) | 1988-01-29 | 1988-01-29 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5633839A JPS5633839A (en) | 1981-04-04 |
| JPS6346575B2 true JPS6346575B2 (en, 2012) | 1988-09-16 |
Family
ID=14503183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10916179A Granted JPS5633839A (en) | 1979-08-29 | 1979-08-29 | Plasma treatment and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633839A (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013909A1 (en) * | 1989-05-12 | 1990-11-15 | Tadahiro Ohmi | Reactive ion etching apparatus |
| JPH03122384A (ja) * | 1989-10-05 | 1991-05-24 | Nakanishi Eng:Kk | 窓障子用ステー |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58122736A (ja) * | 1982-01-14 | 1983-07-21 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜形成法 |
| JPS6086831A (ja) * | 1983-10-19 | 1985-05-16 | Hitachi Ltd | プラズマ処理方法およびその装置 |
| KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
| US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| US4510172A (en) * | 1984-05-29 | 1985-04-09 | International Business Machines Corporation | Technique for thin insulator growth |
| JPS611023A (ja) * | 1984-06-13 | 1986-01-07 | Teru Saamuko Kk | バツチプラズマ装置 |
| JPS61199079A (ja) * | 1985-02-28 | 1986-09-03 | Anelva Corp | 表面処理装置の磁界発生装置 |
| US4585516A (en) * | 1985-03-04 | 1986-04-29 | Tegal Corporation | Variable duty cycle, multiple frequency, plasma reactor |
| JPH0828345B2 (ja) * | 1987-07-10 | 1996-03-21 | 株式会社日立製作所 | ドライエッチング方法および装置 |
| EP0489407A3 (en) * | 1990-12-03 | 1992-07-22 | Applied Materials, Inc. | Plasma reactor using uhf/vhf resonant antenna source, and processes |
| US5330606A (en) * | 1990-12-14 | 1994-07-19 | Matsushita Electric Industrial Co., Ltd. | Plasma source for etching |
| KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
| KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
| JPH07249586A (ja) * | 1993-12-22 | 1995-09-26 | Tokyo Electron Ltd | 処理装置及びその製造方法並びに被処理体の処理方法 |
| BE1008338A5 (nl) * | 1994-04-26 | 1996-04-02 | Cobrain Nv | Multifrequente inductieve werkwijze en inrichting voor het bewerken van materiaal. |
| JP3258839B2 (ja) * | 1994-11-24 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JPH0955376A (ja) * | 1995-08-15 | 1997-02-25 | Sony Corp | プラズマｃｖｄ方法 |
| JP2000269196A (ja) | 1999-03-19 | 2000-09-29 | Toshiba Corp | プラズマ処理方法及びプラズマ処理装置 |
| JP3377773B2 (ja) * | 2000-03-24 | 2003-02-17 | 三菱重工業株式会社 | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
| KR100808862B1 (ko) | 2006-07-24 | 2008-03-03 | 삼성전자주식회사 | 기판처리장치 |
-
1979
- 1979-08-29 JP JP10916179A patent/JPS5633839A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013909A1 (en) * | 1989-05-12 | 1990-11-15 | Tadahiro Ohmi | Reactive ion etching apparatus |
| JPH03122384A (ja) * | 1989-10-05 | 1991-05-24 | Nakanishi Eng:Kk | 窓障子用ステー |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5633839A (en) | 1981-04-04 |
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