JPS5633839A - Plasma treatment and device therefor - Google Patents

Plasma treatment and device therefor

Info

Publication number
JPS5633839A
JPS5633839A JP10916179A JP10916179A JPS5633839A JP S5633839 A JPS5633839 A JP S5633839A JP 10916179 A JP10916179 A JP 10916179A JP 10916179 A JP10916179 A JP 10916179A JP S5633839 A JPS5633839 A JP S5633839A
Authority
JP
Japan
Prior art keywords
plasma
waves
electrode
ions
frequency oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10916179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6346575B2 (en, 2012
Inventor
Takashi Tsuchimoto
Yoshimichi Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10916179A priority Critical patent/JPS5633839A/ja
Publication of JPS5633839A publication Critical patent/JPS5633839A/ja
Publication of JPS6346575B2 publication Critical patent/JPS6346575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP10916179A 1979-08-29 1979-08-29 Plasma treatment and device therefor Granted JPS5633839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10916179A JPS5633839A (en) 1979-08-29 1979-08-29 Plasma treatment and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10916179A JPS5633839A (en) 1979-08-29 1979-08-29 Plasma treatment and device therefor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP1709388A Division JPS63211631A (ja) 1988-01-29 1988-01-29 プラズマ処理装置
JP1709288A Division JPS63211630A (ja) 1988-01-29 1988-01-29 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS5633839A true JPS5633839A (en) 1981-04-04
JPS6346575B2 JPS6346575B2 (en, 2012) 1988-09-16

Family

ID=14503183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10916179A Granted JPS5633839A (en) 1979-08-29 1979-08-29 Plasma treatment and device therefor

Country Status (1)

Country Link
JP (1) JPS5633839A (en, 2012)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122736A (ja) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜形成法
JPS6086831A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd プラズマ処理方法およびその装置
JPS60257526A (ja) * 1984-05-29 1985-12-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 絶縁体層の成長方法
JPS611023A (ja) * 1984-06-13 1986-01-07 Teru Saamuko Kk バツチプラズマ装置
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
JPS61199079A (ja) * 1985-02-28 1986-09-03 Anelva Corp 表面処理装置の磁界発生装置
JPS6415927A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Method and device for dry etching
US4808258A (en) * 1983-10-19 1989-02-28 Hitachi, Ltd. Plasma processing method and apparatus for carrying out the same
JPH04290428A (ja) * 1990-12-03 1992-10-15 Applied Materials Inc Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
WO1995029273A1 (en) * 1994-04-26 1995-11-02 Cobrain N.V. Multi-frequency inductive method and apparatus for the processing of material
JPH08148486A (ja) * 1994-11-24 1996-06-07 Tokyo Electron Ltd プラズマ処理装置
US5547539A (en) * 1993-12-22 1996-08-20 Tokyo Electron Limited Plasma processing apparatus and method
JPH0955376A (ja) * 1995-08-15 1997-02-25 Sony Corp プラズマｃｖｄ方法
US5698062A (en) * 1993-11-05 1997-12-16 Tokyo Electron Limited Plasma treatment apparatus and method
US6110287A (en) * 1993-03-31 2000-08-29 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
JP2001274099A (ja) * 2000-03-24 2001-10-05 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
US6433297B1 (en) 1999-03-19 2002-08-13 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
KR100808862B1 (ko) 2006-07-24 2008-03-03 삼성전자주식회사 기판처리장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
JPH03122384A (ja) * 1989-10-05 1991-05-24 Nakanishi Eng:Kk 窓障子用ステー

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122736A (ja) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> 絶縁膜形成法
JPS6086831A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd プラズマ処理方法およびその装置
US4808258A (en) * 1983-10-19 1989-02-28 Hitachi, Ltd. Plasma processing method and apparatus for carrying out the same
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS60257526A (ja) * 1984-05-29 1985-12-19 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 絶縁体層の成長方法
JPS611023A (ja) * 1984-06-13 1986-01-07 Teru Saamuko Kk バツチプラズマ装置
JPS61199079A (ja) * 1985-02-28 1986-09-03 Anelva Corp 表面処理装置の磁界発生装置
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
JPS6415927A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Method and device for dry etching
JPH04290428A (ja) * 1990-12-03 1992-10-15 Applied Materials Inc Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5593539A (en) * 1990-12-14 1997-01-14 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US6110287A (en) * 1993-03-31 2000-08-29 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US5698062A (en) * 1993-11-05 1997-12-16 Tokyo Electron Limited Plasma treatment apparatus and method
US5547539A (en) * 1993-12-22 1996-08-20 Tokyo Electron Limited Plasma processing apparatus and method
WO1995029273A1 (en) * 1994-04-26 1995-11-02 Cobrain N.V. Multi-frequency inductive method and apparatus for the processing of material
BE1008338A5 (nl) * 1994-04-26 1996-04-02 Cobrain Nv Multifrequente inductieve werkwijze en inrichting voor het bewerken van materiaal.
JPH08148486A (ja) * 1994-11-24 1996-06-07 Tokyo Electron Ltd プラズマ処理装置
JPH0955376A (ja) * 1995-08-15 1997-02-25 Sony Corp プラズマｃｖｄ方法
US6433297B1 (en) 1999-03-19 2002-08-13 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
JP2001274099A (ja) * 2000-03-24 2001-10-05 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
KR100808862B1 (ko) 2006-07-24 2008-03-03 삼성전자주식회사 기판처리장치

Also Published As

Publication number Publication date
JPS6346575B2 (en, 2012) 1988-09-16

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