JPS6336148B2 - - Google Patents

Info

Publication number
JPS6336148B2
JPS6336148B2 JP55163695A JP16369580A JPS6336148B2 JP S6336148 B2 JPS6336148 B2 JP S6336148B2 JP 55163695 A JP55163695 A JP 55163695A JP 16369580 A JP16369580 A JP 16369580A JP S6336148 B2 JPS6336148 B2 JP S6336148B2
Authority
JP
Japan
Prior art keywords
electrode
gate
layer
pattern
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55163695A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5787178A (en
Inventor
Toshiki Ehata
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP55163695A priority Critical patent/JPS5787178A/ja
Publication of JPS5787178A publication Critical patent/JPS5787178A/ja
Publication of JPS6336148B2 publication Critical patent/JPS6336148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP55163695A 1980-11-19 1980-11-19 Semiconductor device and manufacture thereof Granted JPS5787178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55163695A JPS5787178A (en) 1980-11-19 1980-11-19 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55163695A JPS5787178A (en) 1980-11-19 1980-11-19 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5787178A JPS5787178A (en) 1982-05-31
JPS6336148B2 true JPS6336148B2 (enExample) 1988-07-19

Family

ID=15778844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55163695A Granted JPS5787178A (en) 1980-11-19 1980-11-19 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5787178A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device

Also Published As

Publication number Publication date
JPS5787178A (en) 1982-05-31

Similar Documents

Publication Publication Date Title
US4679311A (en) Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
US6194747B1 (en) Field effect transistor
JP3119248B2 (ja) 電界効果トランジスタおよびその製造方法
US5231040A (en) Method of making a field effect transistor
JPH0324062B2 (enExample)
JPS6336148B2 (enExample)
JPS6410953B2 (enExample)
JPH0126195B2 (enExample)
JPH0828380B2 (ja) 半導体装置の製造方法
JPS6340323A (ja) 微細パタ−ンの形成方法
JPS6161550B2 (enExample)
JPH06209018A (ja) 微細ゲート電極の形成方法
JP2503667B2 (ja) 半導体装置の製造方法
JP2776053B2 (ja) 半導体装置の製造方法
US6300190B1 (en) Method for fabricating semiconductor integrated circuit device
JPS62115782A (ja) 半導体装置の製造方法
JPS6239834B2 (enExample)
JPS616870A (ja) 電界効果トランジスタの製造方法
JP2803641B2 (ja) 半導体装置の製造方法
JPS61216487A (ja) 半導体装置の製造方法
JP2607310B2 (ja) 電界効果トランジスタの製造方法
JPH05218090A (ja) 電界効果トランジスタの製造方法
JP3153560B2 (ja) 半導体装置の製造方法
JPH1092846A (ja) 半導体装置及びその製造方法
JPH11233527A (ja) 半導体装置及びその製造方法