JPH0126195B2 - - Google Patents

Info

Publication number
JPH0126195B2
JPH0126195B2 JP56060381A JP6038181A JPH0126195B2 JP H0126195 B2 JPH0126195 B2 JP H0126195B2 JP 56060381 A JP56060381 A JP 56060381A JP 6038181 A JP6038181 A JP 6038181A JP H0126195 B2 JPH0126195 B2 JP H0126195B2
Authority
JP
Japan
Prior art keywords
gate electrode
electrode
gate
film
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56060381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57173980A (en
Inventor
Toshiki Ehata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56060381A priority Critical patent/JPS57173980A/ja
Publication of JPS57173980A publication Critical patent/JPS57173980A/ja
Publication of JPH0126195B2 publication Critical patent/JPH0126195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56060381A 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof Granted JPS57173980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56060381A JPS57173980A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060381A JPS57173980A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28936088A Division JPH01157574A (ja) 1988-11-16 1988-11-16 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS57173980A JPS57173980A (en) 1982-10-26
JPH0126195B2 true JPH0126195B2 (enExample) 1989-05-22

Family

ID=13140503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060381A Granted JPS57173980A (en) 1981-04-21 1981-04-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57173980A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Also Published As

Publication number Publication date
JPS57173980A (en) 1982-10-26

Similar Documents

Publication Publication Date Title
US3994758A (en) Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
JPH0354464B2 (enExample)
JP2904167B2 (ja) 半導体装置の製造方法
JPS6351550B2 (enExample)
KR0170498B1 (ko) T형 게이트 전극의 형성방법
JPH0324062B2 (enExample)
JPH0126195B2 (enExample)
JPS6410953B2 (enExample)
JPS6336148B2 (enExample)
JP2503667B2 (ja) 半導体装置の製造方法
US4621415A (en) Method for manufacturing low resistance sub-micron gate Schottky barrier devices
US6300190B1 (en) Method for fabricating semiconductor integrated circuit device
JPS6340323A (ja) 微細パタ−ンの形成方法
JPS6239834B2 (enExample)
JPS6161550B2 (enExample)
KR100272577B1 (ko) 바이폴라 트랜지스터의 제조방법
JPS616870A (ja) 電界効果トランジスタの製造方法
JPH0684950A (ja) 電界効果トランジスタの製造方法
JPS6258154B2 (enExample)
JP3309909B2 (ja) 半導体装置の製造方法
JP2803641B2 (ja) 半導体装置の製造方法
JPH0684951A (ja) 半導体装置の製造方法
JPH0595004A (ja) 電界効果トランジスタの製造方法
JPS6336149B2 (enExample)
JPS6366432B2 (enExample)