JPS6161550B2 - - Google Patents

Info

Publication number
JPS6161550B2
JPS6161550B2 JP54150444A JP15044479A JPS6161550B2 JP S6161550 B2 JPS6161550 B2 JP S6161550B2 JP 54150444 A JP54150444 A JP 54150444A JP 15044479 A JP15044479 A JP 15044479A JP S6161550 B2 JPS6161550 B2 JP S6161550B2
Authority
JP
Japan
Prior art keywords
active layer
metal
electrode
forming
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54150444A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5673474A (en
Inventor
Kenichi Kikuchi
Shunji Ootani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15044479A priority Critical patent/JPS5673474A/ja
Priority to US06/206,215 priority patent/US4377899A/en
Priority to DE19803043289 priority patent/DE3043289A1/de
Priority to FR8024416A priority patent/FR2474761B1/fr
Publication of JPS5673474A publication Critical patent/JPS5673474A/ja
Publication of JPS6161550B2 publication Critical patent/JPS6161550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15044479A 1979-11-19 1979-11-20 Manufacture of semiconductor device Granted JPS5673474A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15044479A JPS5673474A (en) 1979-11-20 1979-11-20 Manufacture of semiconductor device
US06/206,215 US4377899A (en) 1979-11-19 1980-11-12 Method of manufacturing Schottky field-effect transistors utilizing shadow masking
DE19803043289 DE3043289A1 (de) 1979-11-19 1980-11-17 Herstellungverfahren fuer eine halbleitereinrichtung
FR8024416A FR2474761B1 (fr) 1979-11-19 1980-11-18 Procede de fabrication de transistors a effet de champ a porte formant barriere de schottky

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15044479A JPS5673474A (en) 1979-11-20 1979-11-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5673474A JPS5673474A (en) 1981-06-18
JPS6161550B2 true JPS6161550B2 (enExample) 1986-12-26

Family

ID=15497061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15044479A Granted JPS5673474A (en) 1979-11-19 1979-11-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673474A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177781A (ja) * 1985-02-02 1986-08-09 Sony Corp 電界効果トランジスタの製造方法
JPS61280672A (ja) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd 化合物半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5673474A (en) 1981-06-18

Similar Documents

Publication Publication Date Title
US4377899A (en) Method of manufacturing Schottky field-effect transistors utilizing shadow masking
JPH0354464B2 (enExample)
US3994758A (en) Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US5231040A (en) Method of making a field effect transistor
JPS6161550B2 (enExample)
JPS6155969A (ja) 半導体装置およびその製造方法
JPH0260222B2 (enExample)
GB2064868A (en) Schottky barrier gate field-effect transistor
JP2555979B2 (ja) 半導体装置の製造方法
JPS6161549B2 (enExample)
JPS6323668B2 (enExample)
JPH035658B2 (enExample)
JPS6323669B2 (enExample)
JPS61240684A (ja) シヨツトキ−型電界効果トランジスタ及びその製造方法
JPS6323667B2 (enExample)
JPH0324062B2 (enExample)
JPS616870A (ja) 電界効果トランジスタの製造方法
JP3217714B2 (ja) 電界効果トランジスタのゲート形成方法
JPS5833714B2 (ja) 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法
JP2557432B2 (ja) 電界効果トランジスタ
JP2893776B2 (ja) 半導体装置の製造方法
JP3304595B2 (ja) 半導体装置の製造方法
JP2657950B2 (ja) ゲート電極の形成方法
JPS6258154B2 (enExample)
JPS6366432B2 (enExample)