JPS6331106B2 - - Google Patents

Info

Publication number
JPS6331106B2
JPS6331106B2 JP54154598A JP15459879A JPS6331106B2 JP S6331106 B2 JPS6331106 B2 JP S6331106B2 JP 54154598 A JP54154598 A JP 54154598A JP 15459879 A JP15459879 A JP 15459879A JP S6331106 B2 JPS6331106 B2 JP S6331106B2
Authority
JP
Japan
Prior art keywords
layer
leakage current
channel
semiconductor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54154598A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5678157A (en
Inventor
Hiroyuki Tango
Tai Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP15459879A priority Critical patent/JPS5678157A/ja
Publication of JPS5678157A publication Critical patent/JPS5678157A/ja
Publication of JPS6331106B2 publication Critical patent/JPS6331106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP15459879A 1979-11-29 1979-11-29 Semiconductor device Granted JPS5678157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15459879A JPS5678157A (en) 1979-11-29 1979-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15459879A JPS5678157A (en) 1979-11-29 1979-11-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5678157A JPS5678157A (en) 1981-06-26
JPS6331106B2 true JPS6331106B2 (OSRAM) 1988-06-22

Family

ID=15587678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15459879A Granted JPS5678157A (en) 1979-11-29 1979-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5678157A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0362105U (OSRAM) * 1989-10-16 1991-06-18
JPH0426205U (OSRAM) * 1990-06-22 1992-03-02

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024593B2 (ja) * 1976-03-18 1985-06-13 松下電器産業株式会社 半導体装置
JPS6019672B2 (ja) * 1976-03-18 1985-05-17 松下電器産業株式会社 半導体装置
SE444484B (sv) * 1979-02-26 1986-04-14 Rca Corp Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare
JPS5660015A (en) * 1979-10-22 1981-05-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0362105U (OSRAM) * 1989-10-16 1991-06-18
JPH0426205U (OSRAM) * 1990-06-22 1992-03-02

Also Published As

Publication number Publication date
JPS5678157A (en) 1981-06-26

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