JPH0481335B2 - - Google Patents
Info
- Publication number
- JPH0481335B2 JPH0481335B2 JP57005918A JP591882A JPH0481335B2 JP H0481335 B2 JPH0481335 B2 JP H0481335B2 JP 57005918 A JP57005918 A JP 57005918A JP 591882 A JP591882 A JP 591882A JP H0481335 B2 JPH0481335 B2 JP H0481335B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- integrated circuit
- ion implantation
- metal wiring
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
- 
        - H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
 
- 
        - H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
 
- 
        - H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
 
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP591882A JPS58123753A (ja) | 1982-01-20 | 1982-01-20 | 半導体集積回路 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP591882A JPS58123753A (ja) | 1982-01-20 | 1982-01-20 | 半導体集積回路 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS58123753A JPS58123753A (ja) | 1983-07-23 | 
| JPH0481335B2 true JPH0481335B2 (OSRAM) | 1992-12-22 | 
Family
ID=11624267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP591882A Granted JPS58123753A (ja) | 1982-01-20 | 1982-01-20 | 半導体集積回路 | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS58123753A (OSRAM) | 
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPH0624223B2 (ja) * | 1983-12-09 | 1994-03-30 | 株式会社東芝 | マイクロ波集積回路装置 | 
| JPH07120706B2 (ja) * | 1986-06-27 | 1995-12-20 | 日本電信電話株式会社 | 半導体集積回路の配線構造 | 
| US5942773A (en) * | 1996-06-04 | 1999-08-24 | Fujitsu Limited | Field effect transistor with reduced delay variation | 
| JP3416537B2 (ja) | 1998-11-13 | 2003-06-16 | 富士通カンタムデバイス株式会社 | 化合物半導体装置及びその製造方法 | 
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS5141977A (ja) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | Handotaisochi | 
| JPS5643757A (en) * | 1979-09-18 | 1981-04-22 | Nec Corp | Gallium arsenic type integrated circuit | 
- 
        1982
        - 1982-01-20 JP JP591882A patent/JPS58123753A/ja active Granted
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS58123753A (ja) | 1983-07-23 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| US5159416A (en) | Thin-film-transistor having schottky barrier | |
| JP3201520B2 (ja) | トランジスタ | |
| JP3456913B2 (ja) | 半導体装置 | |
| JPS6153861B2 (OSRAM) | ||
| US4947228A (en) | Integrated circuit power supply contact | |
| JP2001230423A (ja) | Soimosfetデバイスおよびその形成方法 | |
| US11062765B2 (en) | Semiconductor integrated circuit device | |
| US6023095A (en) | Semiconductor device and manufacture method thereof | |
| US20020093052A1 (en) | Semiconductor device | |
| JPH0481335B2 (OSRAM) | ||
| JPH0360149A (ja) | ダイオードより成るvdmos/論理集積回路 | |
| JP2751658B2 (ja) | 半導体装置 | |
| JPS6249734B2 (OSRAM) | ||
| JPS6362904B2 (OSRAM) | ||
| JP2680846B2 (ja) | 半導体記憶装置 | |
| JP2601664B2 (ja) | 絶縁ゲート型電界効果半導体装置 | |
| KR950010286B1 (ko) | 반도체 집적 회로의 장치 | |
| JP3063179B2 (ja) | 半導体メモリ装置 | |
| JPS6331106B2 (OSRAM) | ||
| JP2000101028A (ja) | 半導体装置 | |
| JP2003303834A (ja) | 半導体装置 | |
| JPH0476950A (ja) | 半導体装置 | |
| JPS60128655A (ja) | 半導体装置 | |
| JP2954670B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| JPS62104068A (ja) | 半導体集積回路装置 |