JPS632152B2 - - Google Patents

Info

Publication number
JPS632152B2
JPS632152B2 JP56090082A JP9008281A JPS632152B2 JP S632152 B2 JPS632152 B2 JP S632152B2 JP 56090082 A JP56090082 A JP 56090082A JP 9008281 A JP9008281 A JP 9008281A JP S632152 B2 JPS632152 B2 JP S632152B2
Authority
JP
Japan
Prior art keywords
power supply
wiring
capacitance
area
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56090082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57202773A (en
Inventor
Takeshi Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56090082A priority Critical patent/JPS57202773A/ja
Publication of JPS57202773A publication Critical patent/JPS57202773A/ja
Publication of JPS632152B2 publication Critical patent/JPS632152B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
JP56090082A 1981-06-08 1981-06-08 Silicon integrated circuit device Granted JPS57202773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56090082A JPS57202773A (en) 1981-06-08 1981-06-08 Silicon integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090082A JPS57202773A (en) 1981-06-08 1981-06-08 Silicon integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57202773A JPS57202773A (en) 1982-12-11
JPS632152B2 true JPS632152B2 (OSRAM) 1988-01-18

Family

ID=13988594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090082A Granted JPS57202773A (en) 1981-06-08 1981-06-08 Silicon integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57202773A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692099B2 (ja) * 1988-01-14 1997-12-17 日本電気株式会社 マスタースライス方式の集積回路
JP2723539B2 (ja) * 1988-06-10 1998-03-09 日本電気株式会社 マスタースライス型半導体装置
JPH0548020A (ja) * 1991-08-12 1993-02-26 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
JPS57202773A (en) 1982-12-11

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