JPS63258022A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63258022A JPS63258022A JP62092678A JP9267887A JPS63258022A JP S63258022 A JPS63258022 A JP S63258022A JP 62092678 A JP62092678 A JP 62092678A JP 9267887 A JP9267887 A JP 9267887A JP S63258022 A JPS63258022 A JP S63258022A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photomask
- exposed
- photoresist
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 18
- 238000001020 plasma etching Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62092678A JPS63258022A (ja) | 1987-04-15 | 1987-04-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62092678A JPS63258022A (ja) | 1987-04-15 | 1987-04-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63258022A true JPS63258022A (ja) | 1988-10-25 |
| JPH0577287B2 JPH0577287B2 (enrdf_load_stackoverflow) | 1993-10-26 |
Family
ID=14061143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62092678A Granted JPS63258022A (ja) | 1987-04-15 | 1987-04-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63258022A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02268416A (ja) * | 1989-04-11 | 1990-11-02 | Matsushita Electron Corp | 半導体装置の製造方法及びそれに使用するフオトマスク |
| JPH03266437A (ja) * | 1990-03-16 | 1991-11-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPH05283358A (ja) * | 1992-02-07 | 1993-10-29 | Sumitomo Metal Ind Ltd | 半導体装置のコンタクトホール形成方法 |
| WO2004077484A1 (ja) * | 2003-02-28 | 2004-09-10 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネルの製造方法及びプラズマディスプレイパネル |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4540968B2 (ja) * | 2003-11-13 | 2010-09-08 | パナソニック株式会社 | プラズマディスプレイパネルの製造方法およびプラズマディスプレイ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224628A (ja) * | 1985-07-24 | 1987-02-02 | Matsushita Electronics Corp | ホトレジストパタ−ンの形成方法 |
| JPS6258622A (ja) * | 1985-09-09 | 1987-03-14 | Toshiba Corp | レジストパタ−ン形成方法 |
-
1987
- 1987-04-15 JP JP62092678A patent/JPS63258022A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224628A (ja) * | 1985-07-24 | 1987-02-02 | Matsushita Electronics Corp | ホトレジストパタ−ンの形成方法 |
| JPS6258622A (ja) * | 1985-09-09 | 1987-03-14 | Toshiba Corp | レジストパタ−ン形成方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02268416A (ja) * | 1989-04-11 | 1990-11-02 | Matsushita Electron Corp | 半導体装置の製造方法及びそれに使用するフオトマスク |
| JPH03266437A (ja) * | 1990-03-16 | 1991-11-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPH05283358A (ja) * | 1992-02-07 | 1993-10-29 | Sumitomo Metal Ind Ltd | 半導体装置のコンタクトホール形成方法 |
| WO2004077484A1 (ja) * | 2003-02-28 | 2004-09-10 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネルの製造方法及びプラズマディスプレイパネル |
| US7491107B2 (en) | 2003-02-28 | 2009-02-17 | Panasonic Corporation | Plasma display panel producing method, and plasma display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577287B2 (enrdf_load_stackoverflow) | 1993-10-26 |
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