JPS6323668B2 - - Google Patents
Info
- Publication number
- JPS6323668B2 JPS6323668B2 JP58038169A JP3816983A JPS6323668B2 JP S6323668 B2 JPS6323668 B2 JP S6323668B2 JP 58038169 A JP58038169 A JP 58038169A JP 3816983 A JP3816983 A JP 3816983A JP S6323668 B2 JPS6323668 B2 JP S6323668B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semi
- insulating film
- insulating
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
Landscapes
- Recrystallisation Techniques (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58038169A JPS59165464A (ja) | 1983-03-10 | 1983-03-10 | シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58038169A JPS59165464A (ja) | 1983-03-10 | 1983-03-10 | シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59165464A JPS59165464A (ja) | 1984-09-18 |
| JPS6323668B2 true JPS6323668B2 (en, 2012) | 1988-05-17 |
Family
ID=12517893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58038169A Granted JPS59165464A (ja) | 1983-03-10 | 1983-03-10 | シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165464A (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100434698B1 (ko) | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
| KR100455725B1 (ko) | 2001-10-08 | 2004-11-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
| KR100455724B1 (ko) | 2001-10-08 | 2004-11-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
| KR100431295B1 (ko) | 2001-10-12 | 2004-05-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
| CN107078157A (zh) * | 2014-08-13 | 2017-08-18 | 英特尔公司 | 自对准栅极后制iii‑n晶体管 |
-
1983
- 1983-03-10 JP JP58038169A patent/JPS59165464A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59165464A (ja) | 1984-09-18 |
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