JPS6323362A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6323362A JPS6323362A JP11463687A JP11463687A JPS6323362A JP S6323362 A JPS6323362 A JP S6323362A JP 11463687 A JP11463687 A JP 11463687A JP 11463687 A JP11463687 A JP 11463687A JP S6323362 A JPS6323362 A JP S6323362A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- impurity
- concentration region
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000012535 impurity Substances 0.000 claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 230000005669 field effect Effects 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- 239000011574 phosphorus Substances 0.000 abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11463687A JPS6323362A (ja) | 1987-05-13 | 1987-05-13 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11463687A JPS6323362A (ja) | 1987-05-13 | 1987-05-13 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15337376A Division JPS5378181A (en) | 1976-12-22 | 1976-12-22 | Semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6323362A true JPS6323362A (ja) | 1988-01-30 |
| JPH0461497B2 JPH0461497B2 (ko) | 1992-10-01 |
Family
ID=14642775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11463687A Granted JPS6323362A (ja) | 1987-05-13 | 1987-05-13 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6323362A (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555246A (ja) * | 1991-08-26 | 1993-03-05 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型半導体装置の作製方法 |
| JPH0766393A (ja) * | 1993-08-23 | 1995-03-10 | Nec Kansai Ltd | 半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5169985A (en) * | 1974-12-16 | 1976-06-17 | Hitachi Ltd | Handotaisochino seizohoho |
| JPS6129554A (ja) * | 1984-07-20 | 1986-02-10 | Nec Corp | サ−マルプリントヘツド |
-
1987
- 1987-05-13 JP JP11463687A patent/JPS6323362A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5169985A (en) * | 1974-12-16 | 1976-06-17 | Hitachi Ltd | Handotaisochino seizohoho |
| JPS6129554A (ja) * | 1984-07-20 | 1986-02-10 | Nec Corp | サ−マルプリントヘツド |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555246A (ja) * | 1991-08-26 | 1993-03-05 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型半導体装置の作製方法 |
| JPH0766393A (ja) * | 1993-08-23 | 1995-03-10 | Nec Kansai Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0461497B2 (ko) | 1992-10-01 |
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