JPH0461497B2 - - Google Patents

Info

Publication number
JPH0461497B2
JPH0461497B2 JP62114636A JP11463687A JPH0461497B2 JP H0461497 B2 JPH0461497 B2 JP H0461497B2 JP 62114636 A JP62114636 A JP 62114636A JP 11463687 A JP11463687 A JP 11463687A JP H0461497 B2 JPH0461497 B2 JP H0461497B2
Authority
JP
Japan
Prior art keywords
gate electrode
concentration
impurity region
impurity
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62114636A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6323362A (ja
Inventor
Yoshiaki Kamigaki
Kyoo Ito
Hiroo Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11463687A priority Critical patent/JPS6323362A/ja
Publication of JPS6323362A publication Critical patent/JPS6323362A/ja
Publication of JPH0461497B2 publication Critical patent/JPH0461497B2/ja
Granted legal-status Critical Current

Links

JP11463687A 1987-05-13 1987-05-13 半導体装置の製造方法 Granted JPS6323362A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11463687A JPS6323362A (ja) 1987-05-13 1987-05-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11463687A JPS6323362A (ja) 1987-05-13 1987-05-13 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15337376A Division JPS5378181A (en) 1976-12-22 1976-12-22 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS6323362A JPS6323362A (ja) 1988-01-30
JPH0461497B2 true JPH0461497B2 (ko) 1992-10-01

Family

ID=14642775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11463687A Granted JPS6323362A (ja) 1987-05-13 1987-05-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6323362A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888462B2 (ja) * 1991-08-26 1999-05-10 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JPH0766393A (ja) * 1993-08-23 1995-03-10 Nec Kansai Ltd 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho
JPS6129554A (ja) * 1984-07-20 1986-02-10 Nec Corp サ−マルプリントヘツド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho
JPS6129554A (ja) * 1984-07-20 1986-02-10 Nec Corp サ−マルプリントヘツド

Also Published As

Publication number Publication date
JPS6323362A (ja) 1988-01-30

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