JPS6323351A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS6323351A
JPS6323351A JP62125603A JP12560387A JPS6323351A JP S6323351 A JPS6323351 A JP S6323351A JP 62125603 A JP62125603 A JP 62125603A JP 12560387 A JP12560387 A JP 12560387A JP S6323351 A JPS6323351 A JP S6323351A
Authority
JP
Japan
Prior art keywords
groove
electrode
capacitor
insulating film
capacitor electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62125603A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0441506B2 (https=
Inventor
Hiroshi Iwai
洋 岩井
Yoshio Nishi
西　義雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62125603A priority Critical patent/JPS6323351A/ja
Publication of JPS6323351A publication Critical patent/JPS6323351A/ja
Priority to JP3183716A priority patent/JPH081931B2/ja
Publication of JPH0441506B2 publication Critical patent/JPH0441506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP62125603A 1987-05-22 1987-05-22 半導体装置及びその製造方法 Granted JPS6323351A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62125603A JPS6323351A (ja) 1987-05-22 1987-05-22 半導体装置及びその製造方法
JP3183716A JPH081931B2 (ja) 1987-05-22 1991-06-28 半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62125603A JPS6323351A (ja) 1987-05-22 1987-05-22 半導体装置及びその製造方法
JP3183716A JPH081931B2 (ja) 1987-05-22 1991-06-28 半導体装置及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15897879A Division JPS5681968A (en) 1979-12-07 1979-12-07 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3183716A Division JPH081931B2 (ja) 1987-05-22 1991-06-28 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6323351A true JPS6323351A (ja) 1988-01-30
JPH0441506B2 JPH0441506B2 (https=) 1992-07-08

Family

ID=26461992

Family Applications (2)

Application Number Title Priority Date Filing Date
JP62125603A Granted JPS6323351A (ja) 1987-05-22 1987-05-22 半導体装置及びその製造方法
JP3183716A Expired - Lifetime JPH081931B2 (ja) 1987-05-22 1991-06-28 半導体装置及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP3183716A Expired - Lifetime JPH081931B2 (ja) 1987-05-22 1991-06-28 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (2) JPS6323351A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267612A (ja) * 1987-05-22 1993-10-15 Toshiba Corp 半導体装置及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130178A (en) * 1975-05-07 1976-11-12 Hitachi Ltd Semiconductor memory
JPS52154390A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor device
JPS5376686A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
JPS5394191A (en) * 1977-01-28 1978-08-17 Toshiba Corp Semiconductor device
JPS54121080A (en) * 1978-03-13 1979-09-19 Nec Corp Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323351A (ja) * 1987-05-22 1988-01-30 Toshiba Corp 半導体装置及びその製造方法
JP2846411B2 (ja) * 1990-06-07 1999-01-13 旭化成工業株式会社 新規共重合体ラテックスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130178A (en) * 1975-05-07 1976-11-12 Hitachi Ltd Semiconductor memory
JPS52154390A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor device
JPS5376686A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
JPS5394191A (en) * 1977-01-28 1978-08-17 Toshiba Corp Semiconductor device
JPS54121080A (en) * 1978-03-13 1979-09-19 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267612A (ja) * 1987-05-22 1993-10-15 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0441506B2 (https=) 1992-07-08
JPH05267612A (ja) 1993-10-15
JPH081931B2 (ja) 1996-01-10

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