JPS63186422A - ウエハサセプタ装置 - Google Patents

ウエハサセプタ装置

Info

Publication number
JPS63186422A
JPS63186422A JP62019348A JP1934887A JPS63186422A JP S63186422 A JPS63186422 A JP S63186422A JP 62019348 A JP62019348 A JP 62019348A JP 1934887 A JP1934887 A JP 1934887A JP S63186422 A JPS63186422 A JP S63186422A
Authority
JP
Japan
Prior art keywords
gas
susceptor
wafer
vacuum
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62019348A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530299B2 (enExample
Inventor
Tadahiro Omi
忠弘 大見
Masaru Umeda
優 梅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP62019348A priority Critical patent/JPS63186422A/ja
Priority to PCT/JP1988/000067 priority patent/WO1993013548A1/ja
Priority to US07/391,556 priority patent/US5119541A/en
Publication of JPS63186422A publication Critical patent/JPS63186422A/ja
Publication of JPH0530299B2 publication Critical patent/JPH0530299B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP62019348A 1987-01-28 1987-01-28 ウエハサセプタ装置 Granted JPS63186422A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62019348A JPS63186422A (ja) 1987-01-28 1987-01-28 ウエハサセプタ装置
PCT/JP1988/000067 WO1993013548A1 (fr) 1987-01-28 1988-01-28 Suscepteur de tranches
US07/391,556 US5119541A (en) 1987-01-28 1988-01-28 Wafer succeptor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62019348A JPS63186422A (ja) 1987-01-28 1987-01-28 ウエハサセプタ装置

Publications (2)

Publication Number Publication Date
JPS63186422A true JPS63186422A (ja) 1988-08-02
JPH0530299B2 JPH0530299B2 (enExample) 1993-05-07

Family

ID=11996885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62019348A Granted JPS63186422A (ja) 1987-01-28 1987-01-28 ウエハサセプタ装置

Country Status (3)

Country Link
US (1) US5119541A (enExample)
JP (1) JPS63186422A (enExample)
WO (1) WO1993013548A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174114A (ja) * 1988-12-26 1990-07-05 Toshiba Ceramics Co Ltd サセプタ
JP2021050366A (ja) * 2019-09-20 2021-04-01 東京エレクトロン株式会社 エッチング装置及びエッチング方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1120817B8 (en) * 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
EP0800705B1 (en) * 1995-10-20 2000-07-12 Koninklijke Philips Electronics N.V. Manufacture of a semiconductor device with selectively deposited semiconductor zone
EP1036406B1 (en) 1997-11-03 2003-04-02 ASM America, Inc. Improved low mass wafer support system
US6410172B1 (en) 1999-11-23 2002-06-25 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
JP4374156B2 (ja) * 2000-09-01 2009-12-02 日本碍子株式会社 Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
JP3579344B2 (ja) * 2000-11-15 2004-10-20 日本碍子株式会社 Ｉｉｉｖ族窒化物膜の製造方法および製造装置
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
US8603248B2 (en) * 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
US8460764B2 (en) * 2008-03-06 2013-06-11 Georgia Tech Research Corporation Method and apparatus for producing ultra-thin graphitic layers
US20100055318A1 (en) * 2008-08-29 2010-03-04 Veeco Instruments Inc. Wafer carrier with varying thermal resistance
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
US20110185969A1 (en) * 2009-08-21 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Dual heating for precise wafer temperature control
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
JP6559706B2 (ja) 2014-01-27 2019-08-14 ビーコ インストルメンツ インコーポレイテッド 化学蒸着システム用の複合半径を有する保持ポケットを有するウェハキャリア
US11961756B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
CN117878049A (zh) * 2019-10-02 2024-04-12 佳能株式会社 晶片卡盘、其生产方法和曝光装置
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
TWI888578B (zh) 2020-06-23 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座及反應腔室
USD1031676S1 (en) 2020-12-04 2024-06-18 Asm Ip Holding B.V. Combined susceptor, support, and lift system
CN112687597B (zh) * 2020-12-25 2022-08-05 集美大学 一种高温基片退火架
USD1067204S1 (en) * 2022-05-31 2025-03-18 Asm Ip Holding B.V. Susceptor
USD1030687S1 (en) * 2022-05-31 2024-06-11 Asm Ip Holding B.V. Susceptor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783822A (en) * 1972-05-10 1974-01-08 J Wollam Apparatus for use in deposition of films from a vapor phase
JPS50747A (enExample) * 1973-05-02 1975-01-07
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPS5185649U (enExample) * 1974-12-28 1976-07-09
JPS5185649A (ja) * 1975-01-24 1976-07-27 Nippon Signal Co Ltd Kinsentorokuki
JPS5381069A (en) * 1976-12-27 1978-07-18 Hitachi Ltd Production of susceptor in cvd device
JPS62205619A (ja) * 1986-03-06 1987-09-10 Dainippon Screen Mfg Co Ltd 半導体の加熱方法及びその方法に使用されるサセプタ
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174114A (ja) * 1988-12-26 1990-07-05 Toshiba Ceramics Co Ltd サセプタ
JP2021050366A (ja) * 2019-09-20 2021-04-01 東京エレクトロン株式会社 エッチング装置及びエッチング方法

Also Published As

Publication number Publication date
JPH0530299B2 (enExample) 1993-05-07
US5119541A (en) 1992-06-09
WO1993013548A1 (fr) 1993-07-08

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