JPS63173322A - 半導体露光装置 - Google Patents

半導体露光装置

Info

Publication number
JPS63173322A
JPS63173322A JP62003963A JP396387A JPS63173322A JP S63173322 A JPS63173322 A JP S63173322A JP 62003963 A JP62003963 A JP 62003963A JP 396387 A JP396387 A JP 396387A JP S63173322 A JPS63173322 A JP S63173322A
Authority
JP
Japan
Prior art keywords
pattern
integrator
laser beam
laser
printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62003963A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0545051B2 (enrdf_load_stackoverflow
Inventor
Akira Ono
明 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62003963A priority Critical patent/JPS63173322A/ja
Publication of JPS63173322A publication Critical patent/JPS63173322A/ja
Publication of JPH0545051B2 publication Critical patent/JPH0545051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
JP62003963A 1987-01-13 1987-01-13 半導体露光装置 Granted JPS63173322A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62003963A JPS63173322A (ja) 1987-01-13 1987-01-13 半導体露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62003963A JPS63173322A (ja) 1987-01-13 1987-01-13 半導体露光装置

Publications (2)

Publication Number Publication Date
JPS63173322A true JPS63173322A (ja) 1988-07-16
JPH0545051B2 JPH0545051B2 (enrdf_load_stackoverflow) 1993-07-08

Family

ID=11571736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62003963A Granted JPS63173322A (ja) 1987-01-13 1987-01-13 半導体露光装置

Country Status (1)

Country Link
JP (1) JPS63173322A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152411A (ja) * 1987-09-17 1989-06-14 Olympus Optical Co Ltd 半導体露光装置の照明光学系
JPH01159990U (enrdf_load_stackoverflow) * 1988-04-19 1989-11-07
JPH01290276A (ja) * 1988-05-18 1989-11-22 Nikon Corp 照明装置
JPH02142111A (ja) * 1988-11-24 1990-05-31 Hitachi Ltd 照明方法及びその装置並びに投影式露光方法及びその装置
JPH07308788A (ja) * 1994-05-16 1995-11-28 Sanyo Electric Co Ltd 光加工法及び光起電力装置の製造方法
WO1997004917A1 (fr) * 1995-08-02 1997-02-13 Komatsu Ltd. Marqueur laser
JPH1172905A (ja) * 1997-06-27 1999-03-16 Toshiba Corp フォトマスク修復方法、検査方法、検査装置及びフォトマスク製造方法
JP2003039189A (ja) * 2001-07-27 2003-02-12 Hamamatsu Photonics Kk レーザ光照射装置及び表面処理方法
JP2003130802A (ja) * 2001-10-26 2003-05-08 Nippon Steel Corp 疵検査装置及び疵検査方法
JP2004110072A (ja) * 1997-06-27 2004-04-08 Toshiba Corp フォトマスク修復方法、検査方法、検査装置及びフォトマスク製造方法
JP2004157548A (ja) * 1997-06-27 2004-06-03 Toshiba Corp フォトマスク修復方法、検査方法、検査装置及びフォトマスク製造方法
JP2004188457A (ja) * 2002-12-11 2004-07-08 Hitachi Zosen Corp ビーム成形方法及び装置
US6849363B2 (en) 1997-06-27 2005-02-01 Kabushiki Kaisha Toshiba Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device
JP2009162762A (ja) * 2003-03-31 2009-07-23 Zolo Technologies Inc 燃焼の監視および制御のための方法と装置
US8049897B2 (en) 2007-04-18 2011-11-01 Kabushiki Kaisha Toshiba Reticle defect inspection apparatus and inspection method using thereof
US20120212720A1 (en) * 2011-02-18 2012-08-23 Carl Zeiss Smt Gmbh Device for guiding electromagnetic radiation into a projection exposure apparatus
JP2012204819A (ja) * 2011-03-28 2012-10-22 Gigaphoton Inc レーザシステムおよびレーザ生成方法
JP2015145811A (ja) * 2014-02-03 2015-08-13 株式会社ニューフレアテクノロジー 照明装置及びパターン検査装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831969A (enrdf_load_stackoverflow) * 1971-08-27 1973-04-26
JPS5372575A (en) * 1976-12-10 1978-06-28 Thomson Csf Pattern transfer optical device
JPS54111832A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Exposure device
JPS59222844A (ja) * 1983-05-25 1984-12-14 パ−キン−エルマ−・ツエンゾ−ル・アンシュタルト マスクの投影複写装置
JPS61279822A (ja) * 1985-06-05 1986-12-10 Canon Inc 照明光学系
JPS6332555A (ja) * 1986-07-25 1988-02-12 Nippon Telegr & Teleph Corp <Ntt> 露光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831969A (enrdf_load_stackoverflow) * 1971-08-27 1973-04-26
JPS5372575A (en) * 1976-12-10 1978-06-28 Thomson Csf Pattern transfer optical device
JPS54111832A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Exposure device
JPS59222844A (ja) * 1983-05-25 1984-12-14 パ−キン−エルマ−・ツエンゾ−ル・アンシュタルト マスクの投影複写装置
JPS61279822A (ja) * 1985-06-05 1986-12-10 Canon Inc 照明光学系
JPS6332555A (ja) * 1986-07-25 1988-02-12 Nippon Telegr & Teleph Corp <Ntt> 露光装置

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152411A (ja) * 1987-09-17 1989-06-14 Olympus Optical Co Ltd 半導体露光装置の照明光学系
JPH01159990U (enrdf_load_stackoverflow) * 1988-04-19 1989-11-07
JPH01290276A (ja) * 1988-05-18 1989-11-22 Nikon Corp 照明装置
JPH02142111A (ja) * 1988-11-24 1990-05-31 Hitachi Ltd 照明方法及びその装置並びに投影式露光方法及びその装置
JPH07308788A (ja) * 1994-05-16 1995-11-28 Sanyo Electric Co Ltd 光加工法及び光起電力装置の製造方法
WO1997004917A1 (fr) * 1995-08-02 1997-02-13 Komatsu Ltd. Marqueur laser
US6849363B2 (en) 1997-06-27 2005-02-01 Kabushiki Kaisha Toshiba Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device
JP2004110072A (ja) * 1997-06-27 2004-04-08 Toshiba Corp フォトマスク修復方法、検査方法、検査装置及びフォトマスク製造方法
JP2004157548A (ja) * 1997-06-27 2004-06-03 Toshiba Corp フォトマスク修復方法、検査方法、検査装置及びフォトマスク製造方法
JPH1172905A (ja) * 1997-06-27 1999-03-16 Toshiba Corp フォトマスク修復方法、検査方法、検査装置及びフォトマスク製造方法
US7070889B2 (en) 1997-06-27 2006-07-04 Kabushiki Kaisha Toshiba Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device
US7378201B2 (en) 1997-06-27 2008-05-27 Kabushiki Kaisha Toshiba Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device
JP2003039189A (ja) * 2001-07-27 2003-02-12 Hamamatsu Photonics Kk レーザ光照射装置及び表面処理方法
JP2003130802A (ja) * 2001-10-26 2003-05-08 Nippon Steel Corp 疵検査装置及び疵検査方法
JP2004188457A (ja) * 2002-12-11 2004-07-08 Hitachi Zosen Corp ビーム成形方法及び装置
JP2009162762A (ja) * 2003-03-31 2009-07-23 Zolo Technologies Inc 燃焼の監視および制御のための方法と装置
JP2010044088A (ja) * 2003-03-31 2010-02-25 Zolo Technologies Inc 燃焼の監視および制御のための方法と装置
JP2013007753A (ja) * 2003-03-31 2013-01-10 Zolo Technologies Inc 燃焼の監視および制御のための方法と装置
US8049897B2 (en) 2007-04-18 2011-11-01 Kabushiki Kaisha Toshiba Reticle defect inspection apparatus and inspection method using thereof
US20120212720A1 (en) * 2011-02-18 2012-08-23 Carl Zeiss Smt Gmbh Device for guiding electromagnetic radiation into a projection exposure apparatus
JP2012175102A (ja) * 2011-02-18 2012-09-10 Carl Zeiss Smt Gmbh 投影露光装置へ電磁放射を案内する装置
US9310701B2 (en) 2011-02-18 2016-04-12 Carl Zeiss Smt Gmbh Device for guiding electromagnetic radiation into a projection exposure apparatus
JP2012204819A (ja) * 2011-03-28 2012-10-22 Gigaphoton Inc レーザシステムおよびレーザ生成方法
JP2015145811A (ja) * 2014-02-03 2015-08-13 株式会社ニューフレアテクノロジー 照明装置及びパターン検査装置

Also Published As

Publication number Publication date
JPH0545051B2 (enrdf_load_stackoverflow) 1993-07-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees