JPS63164344A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63164344A
JPS63164344A JP30892386A JP30892386A JPS63164344A JP S63164344 A JPS63164344 A JP S63164344A JP 30892386 A JP30892386 A JP 30892386A JP 30892386 A JP30892386 A JP 30892386A JP S63164344 A JPS63164344 A JP S63164344A
Authority
JP
Japan
Prior art keywords
wiring
stress
protective film
silicon oxide
insulating protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30892386A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0332214B2 (enExample
Inventor
Yasunobu Kodaira
小平　靖宣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP30892386A priority Critical patent/JPS63164344A/ja
Publication of JPS63164344A publication Critical patent/JPS63164344A/ja
Publication of JPH0332214B2 publication Critical patent/JPH0332214B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP30892386A 1986-12-26 1986-12-26 半導体装置 Granted JPS63164344A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30892386A JPS63164344A (ja) 1986-12-26 1986-12-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30892386A JPS63164344A (ja) 1986-12-26 1986-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS63164344A true JPS63164344A (ja) 1988-07-07
JPH0332214B2 JPH0332214B2 (enExample) 1991-05-10

Family

ID=17986906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30892386A Granted JPS63164344A (ja) 1986-12-26 1986-12-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS63164344A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03133131A (ja) * 1989-10-18 1991-06-06 Mitsubishi Electric Corp 半導体装置
JPH04213829A (ja) * 1990-02-02 1992-08-04 Applied Materials Inc 半導体ウエハの段状表面にボイドを含まない酸化物層を形成する二段階法
US5442223A (en) * 1990-10-17 1995-08-15 Nippondenso Co., Ltd. Semiconductor device with stress relief
JP2010511299A (ja) * 2006-11-29 2010-04-08 インターナショナル・ビジネス・マシーンズ・コーポレーション 二重ライナ・キャッピング層の相互接続構造の半導体デバイス及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149752A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Structure of multilayer wiring

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149752A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Structure of multilayer wiring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03133131A (ja) * 1989-10-18 1991-06-06 Mitsubishi Electric Corp 半導体装置
JPH04213829A (ja) * 1990-02-02 1992-08-04 Applied Materials Inc 半導体ウエハの段状表面にボイドを含まない酸化物層を形成する二段階法
US5442223A (en) * 1990-10-17 1995-08-15 Nippondenso Co., Ltd. Semiconductor device with stress relief
JP2010511299A (ja) * 2006-11-29 2010-04-08 インターナショナル・ビジネス・マシーンズ・コーポレーション 二重ライナ・キャッピング層の相互接続構造の半導体デバイス及びその製造方法

Also Published As

Publication number Publication date
JPH0332214B2 (enExample) 1991-05-10

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Legal Events

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