JPS63156075A - 半導体素子搭載用電気絶縁性窒化アルミニウム基板及びその製造方法 - Google Patents

半導体素子搭載用電気絶縁性窒化アルミニウム基板及びその製造方法

Info

Publication number
JPS63156075A
JPS63156075A JP62199758A JP19975887A JPS63156075A JP S63156075 A JPS63156075 A JP S63156075A JP 62199758 A JP62199758 A JP 62199758A JP 19975887 A JP19975887 A JP 19975887A JP S63156075 A JPS63156075 A JP S63156075A
Authority
JP
Japan
Prior art keywords
less
sintered body
aluminum nitride
powder
total amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62199758A
Other languages
English (en)
Japanese (ja)
Other versions
JPH054950B2 (https=
Inventor
竹田　幸男
荻原　覚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of JPS63156075A publication Critical patent/JPS63156075A/ja
Publication of JPH054950B2 publication Critical patent/JPH054950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
JP62199758A 1986-08-13 1987-08-12 半導体素子搭載用電気絶縁性窒化アルミニウム基板及びその製造方法 Granted JPS63156075A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18847986 1986-08-13
JP61-188479 1986-08-13

Publications (2)

Publication Number Publication Date
JPS63156075A true JPS63156075A (ja) 1988-06-29
JPH054950B2 JPH054950B2 (https=) 1993-01-21

Family

ID=16224448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199758A Granted JPS63156075A (ja) 1986-08-13 1987-08-12 半導体素子搭載用電気絶縁性窒化アルミニウム基板及びその製造方法

Country Status (2)

Country Link
US (1) US4796077A (https=)
JP (1) JPS63156075A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656113A (en) * 1993-08-03 1997-08-12 Ngk Spark Plug Co., Ltd. Method of manufacturing a multilayered wiring substrate of aluminum nitride having a high dielectric layer
JP2009076648A (ja) * 2007-09-20 2009-04-09 Mitsubishi Materials Corp パワーモジュール用基板
WO2012144638A1 (ja) * 2011-04-21 2012-10-26 株式会社ブリヂストン セラミックス焼結体及びセラミックス焼結体の製造方法
CN115253950A (zh) * 2022-07-29 2022-11-01 氢源科技(江苏)有限公司 一种微反应器及其制备方法和应用

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264388A (en) * 1988-05-16 1993-11-23 Sumitomo Electric Industries, Inc. Sintered body of aluminum nitride
US5371049A (en) * 1989-01-09 1994-12-06 Fmc Corporation Ceramic composite of silicon carbide and aluminum nitride
JPH0766971B2 (ja) * 1989-06-07 1995-07-19 シャープ株式会社 炭化珪素半導体装置
US5258647A (en) * 1989-07-03 1993-11-02 General Electric Company Electronic systems disposed in a high force environment
US5057908A (en) * 1990-07-10 1991-10-15 Iowa State University Research Foundation, Inc. High power semiconductor device with integral heat sink
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
DE4400131A1 (de) * 1994-01-05 1995-07-06 Hoechst Ceram Tec Ag Verfahren zum Herstellen von keramischen Bauteilen aus Siliziumcarbid
US5391914A (en) * 1994-03-16 1995-02-21 The United States Of America As Represented By The Secretary Of The Navy Diamond multilayer multichip module substrate
JP3662955B2 (ja) * 1994-09-16 2005-06-22 株式会社東芝 回路基板および回路基板の製造方法
DE69601670T2 (de) * 1995-07-19 1999-11-11 Tokuyama Corp., Tokuya Aluminiumnitrid-Verbindungsstruktur
US6017485A (en) * 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
JP4080030B2 (ja) 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
US5838545A (en) * 1996-10-17 1998-11-17 International Business Machines Corporation High performance, low cost multi-chip modle package
JPH10229004A (ja) * 1997-02-17 1998-08-25 Murata Mfg Co Ltd チップ型バリスタ
US6387748B1 (en) 1999-02-16 2002-05-14 Micron Technology, Inc. Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions
EP1195810B1 (en) * 2000-03-15 2011-05-11 Sumitomo Electric Industries, Ltd. Method for producing an aluminum-silicon carbide semiconductor substrate the same
DE102009033502B4 (de) * 2009-07-15 2016-03-03 Schott Ag Verfahren und Vorrichtung zur Herstellung von Glasprodukten aus einer Glasschmelze
US9673315B2 (en) * 2015-03-24 2017-06-06 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator
KR20160126751A (ko) * 2015-04-24 2016-11-02 삼성전기주식회사 코일 전자부품 및 그 제조방법
DE102019217386B4 (de) * 2019-11-11 2023-12-14 Mahle International Gmbh Verfahren zum Herstellen einer Elektronikanordnung und die Elektronikanordnung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027653A (ja) * 1983-07-21 1985-02-12 株式会社日立製作所 セラミツク抵抗材料

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815953B2 (ja) * 1980-06-06 1983-03-28 株式会社日立製作所 電気的装置用基板
DE3064598D1 (en) * 1979-11-05 1983-09-22 Hitachi Ltd Electrically insulating substrate and a method of making such a substrate
JPS605551B2 (ja) * 1982-10-14 1985-02-12 株式会社東芝 高熱伝導性セラミツクスの製造方法
JPS5891059A (ja) * 1981-11-25 1983-05-30 株式会社東芝 複合セラミツクス焼結体及びその製造方法
JPS5896757A (ja) * 1981-12-04 1983-06-08 Hitachi Ltd 半導体装置
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板
JPS59107975A (ja) * 1982-12-08 1984-06-22 旭硝子株式会社 ＳｉＣ質焼結体およびその製法
US4687657A (en) * 1986-06-09 1987-08-18 Celanese Corporation Fabrication of SiC - AlN alloys
JPH0777247B2 (ja) * 1986-09-17 1995-08-16 富士通株式会社 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027653A (ja) * 1983-07-21 1985-02-12 株式会社日立製作所 セラミツク抵抗材料

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656113A (en) * 1993-08-03 1997-08-12 Ngk Spark Plug Co., Ltd. Method of manufacturing a multilayered wiring substrate of aluminum nitride having a high dielectric layer
US5709928A (en) * 1993-08-03 1998-01-20 Ngk Spark Plug Co., Ltd Multilayered wiring substrate of aluminum nitride having a high dielectric layer and method of manufacture thereof
JP2009076648A (ja) * 2007-09-20 2009-04-09 Mitsubishi Materials Corp パワーモジュール用基板
WO2012144638A1 (ja) * 2011-04-21 2012-10-26 株式会社ブリヂストン セラミックス焼結体及びセラミックス焼結体の製造方法
JP5819947B2 (ja) * 2011-04-21 2015-11-24 株式会社ブリヂストン セラミックス焼結体及びセラミックス焼結体の製造方法
US9522849B2 (en) 2011-04-21 2016-12-20 Bridgestone Corporation Ceramic sintered body and method of manufacturing ceramic sintered body
CN115253950A (zh) * 2022-07-29 2022-11-01 氢源科技(江苏)有限公司 一种微反应器及其制备方法和应用
CN115253950B (zh) * 2022-07-29 2024-02-13 氢源科技(江苏)有限公司 一种微反应器及其制备方法和应用

Also Published As

Publication number Publication date
US4796077A (en) 1989-01-03
JPH054950B2 (https=) 1993-01-21

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